➀ Texas Instruments' TIDA-010954 reference design presents a 600W bidirectional microinverter using GaN technology, achieving 640 W/L power density without heat sinks;

➁ It combines solar PV and battery storage integration through cycloconverter-based AC-DAB topology, supporting 60V DC input and 230V AC output with reactive power compensation;

➂ Features digital control via TMS320F28P55x microcontroller and high-efficiency LMG2100R026 GaN modules, ideal for residential energy systems and grid-tied applications.

➀ Qorvo's QPA1314 is a high-power MMIC amplifier for 13.75–14.5 GHz satellite communications, built on 0.15μm GaN-on-SiC technology;

➁ It delivers 46 dBm output power, 30% efficiency, and supports extended frequencies up to 15.35 GHz in compact packaging with advanced thermal management;

➂ Designed for commercial/military radar and communication systems, the device is fully tested and RoHS compliant.

➀ MIT researchers developed a low-cost method to integrate gallium nitride (GaN) transistors onto standard silicon chips using copper bonding, enabling higher performance and efficient scaling;

➁ The process eliminates wafer-level bonding, reduces GaN material waste by 95%, and operates at temperatures below 400°C to prevent thermal damage;

➂ Demonstrated power amplifiers showed superior bandwidth and signal gain, with potential applications in consumer electronics, AI infrastructure, and quantum computing.

➀ Imec developed a GaN MOSHEMT on silicon with record 27.8dBm output power and 66% efficiency at 13GHz/5V, optimized for 6G FR3 band (7-24GHz);

➁ Achieved ultra-low 0.024Ω·mm contact resistance using regrown n⁺(In)GaN, potentially boosting output power density by 70%;

➂ Addresses limitations of current GaAs and SiC-based solutions, enabling scalable silicon platforms for future 6G mobile devices.

➀ Navitas Semiconductor launched a 12kW power supply unit (PSU) optimized for AI-driven hyperscale data centers, compliant with Open Rack v3/OCP standards for 120 kW racks;

➁ The PSU integrates GaNSafe ICs and 3rd-gen SiC MOSFETs with digital control, achieving up to 30% lower power losses through CrCM/CCM mode switching;

➂ Features include a compact design (790mm length), 50V/12kW output, and safeguards like thermal protection, targeting AI infrastructure scalability and energy efficiency.

➀ Wolfspeed is expected to file for a pre-packaged Chapter 11 bankruptcy due to $6.5 billion debt and rejected creditor restructuring proposals;

➁ The company faced a 15% revenue loss after losing Tesla and Volkswagen as customers, and its SiC market share dropped from 32% to 19% amid competition, notably from China;

➂ Utilization at its New York fab stands at 25%, and a pending $750 million CHIPS Act subsidy is now uncertain.

➀ Infineon introduces the CoolGaN Bidirectional Switch 650 V G5, a GaN-based device enabling bidirectional voltage and current blocking through monolithic integration;

➀ The switch simplifies power converters by replacing traditional back-to-back setups, enhancing efficiency, reliability, and compactness for solar microinverters, EV charging, and data centers;

➀ Supports grid features like reactive power compensation and bidirectional power flow while reducing component count and manufacturing costs.

➀ EPC launched a 40V GaN power transistor (EPC2366) targeting 48V-12V LLC DC-DC converters, aiming to replace silicon MOSFETs in secondary-side synchronous rectification;

➁ The device features ultra-low Rds(on) of 0.8mΩ, 68A continuous current, and thermal management with both top (0.6°C/W) and bottom (1.8°C/W) cooling capabilities;

➂ Supported by evaluation boards like EPC90167, it also targets 24V battery-powered motor drives, though samples require qualification for access.

➀ Navitas Semiconductor and Great Wall Power developed a 2.5 kW DC-DC converter for AI data centers, achieving 97.9% efficiency and 92.36 W/cm³ power density;

➁ The GaN-based design supports 400 V DC architectures, reducing space requirements by up to 8x compared to silicon solutions;

➂ Features integrated short-circuit protection and complies with Open Compute Project standards for scalable AI server and telecom applications.

➀ Fraunhofer IAF developed a monolithic bidirectional 1200 V GaN switch with integrated free-wheeling diodes using GaN-on-insulator technology, enhancing efficiency in EV chargers and renewable energy systems;

➁ The institute also demonstrated a single-gate GaN HEMT as a bidirectional switch for low-voltage 3-level converters, simplifying control in multi-level topologies;

➂ These innovations, along with advancements in GaN power electronics across 48 V to 1200 V classes, will be showcased at PCIM Europe 2025, highlighting Europe's progress in energy transition technologies.

➀ Fraunhofer IAF developed a monolithic bidirectional 1200V GaN switch using GaN-on-Insulator technology, integrating two freewheeling diodes to enhance efficiency in EV chargers, renewable energy systems, and automotive powertrains;

➁ The team also demonstrated a single-gate GaN HEMT as a bidirectional switch for low-voltage multi-level converters, simplifying transistor control compared to dual-gate solutions;

➂ These innovations, presented at PCIM Europe 2025, highlight advancements in GaN power electronics across 48V to 1200V applications, including plans for 1700V-class devices and modular integration.

➀ Texas Instruments' TIDA-010949 is a 600W solar power optimizer with GaN technology, supporting up to 80V/18A input/output;

➁ Features a configurable buck-boost converter, >99% efficiency, and integrated PLC/wireless communication via C2000 MCU;

➂ Includes bypass circuitry, MPPT algorithm, and compact design for solar optimizers/rapid shutdown systems.

➀ The transition from silicon-based components to GaN technology is reshaping the electronics industry;

➁ GaN HEMTs provide superior efficiency and improved thermal management over traditional semiconductors;

➂ This guide is tailored for engineers and enthusiasts in modern electronics.

➀ An international team of scientists has achieved a super-solid state by shining laser light on gallium arsenide;

➁ This super-solid exhibits properties of both liquids and solids, and is a significant breakthrough in fundamental physics;

➂ The research has potential applications in LEDs and could lead to new ways of building quantum devices.

➀ A prototype for an E-Bike terminal has been developed at the Hochschule Karlsruhe (HKA) as part of a project aiming for sustainable mobility;

➁ The terminal is constructed primarily from renewable resources (wood) and is designed to be replicable in other locations;

➂ The project includes a solar power system to charge the E-bikes and features social components such as a meeting point for students and staff.

➀ This study explores the development of chitosan-silanized hexagonal boron nitride (hBN) nanocomposite films;

➁ It focuses on their structural, mechanical, and barrier properties;

➂ The research aims to enhance the performance of biodegradable polymer films, overcoming limitations of chitosan.

➀ Infineon Technologies AG has unveiled the world's first industrial-grade GaN transistor family with an integrated Schottky diode.

➁ This innovation, called CoolGaN Transistor G5 series, enhances efficiency and simplifies design for various industrial applications.

➂ It targets telecom, servers, DC-DC converters, USB-C chargers, PSUs, and motor drives, addressing challenges faced by engineers using GaN technology.

➀ Infineon is planning a 100V GaN transistor with an integrated Schottky diode for hard-switched power topologies;

➁ The lack of body diode in GaN-based topologies can lead to higher power losses due to the larger effective body diode voltage;

➂ The new device is designed to reduce dead-time and maintain efficiency by connecting a Schottky diode in anti-parallel with the GaN transistor.

➀ MinebeaMitsumi has announced a tender offer to acquire thermistor specialist Shibaura Electronics to save it from a hostile takeover bid from Taiwan's Yageo Corp.;

➁ Shibaura Electronics, with a 13.5% world market share in thermistors, is a key player in vehicles, wind turbines, and industrial robots;

➂ Yageo Corp. plans to make a takeover bid on May 7th, offering $29 per share, but MinebeaMitsumi is offering $31 per share, totaling $485 million for the company.

➀ IQE和X-FAB签署了一项联合开发协议（JDA），旨在创建一个基于欧洲的GaN功率器件平台解决方案；

➁ 该协议为期两年，双方将合作开发650V GaN器件；

➂ 该协议将利用IQE的GaN外延设计和工艺专长以及X-FAB的技术开发能力和器件制造能力，为汽车、数据中心和消费应用提供优化的技术-衬底组合。