➀ Stanford researchers developed ultra-thin diamond layers to address chip overheating by spreading heat efficiently, reducing temperatures by up to 70°C in GaN transistors.

➀ The diamond film, grown at a low 400°C, integrates directly with semiconductors and forms a silicon-carbide interface for effective heat transfer.

➂ Collaborations with TSMC, Samsung, and Applied Materials aim to commercialize this cooling solution for next-gen high-density chips and 3D chip stacks.

➀ STMicroelectronics launches the STDRIVEG211 and STDRIVEG210 GaN half-bridge driver chips for industrial and telecom power supplies, supporting 72V batteries and 110V AC lines with a 220V maximum rail voltage;

➁ The STDRIVEG211 features 6V gate protection, short-circuit detection via an external comparator, and automatic shutdown, while the STDRIVEG210 omits the comparator for applications like solar inverters;

➂ Designed for resonant/hard-switching power supplies, motor drives, and Class-D amplifiers, the chips offer 2.4A drive current, thermal protection, and optimized gate control with a 5x4mm QFN package.

➀ Silvaco's webinar detailed GaN HEMT design using TCAD tools to model polarization effects and optimize device performance parameters;

➁ The Victory tool suite enables process simulation, machine learning-driven analytics, and SPICE model generation for vertical/lateral GaN structures;

➂ Applications span power electronics markets with validation from ST Microelectronics and Fraunhofer ISIT through digital twin methodologies.

➀ Ferdinand-Braun-Institut (FBH) presented advancements in UVC LEDs for medical disinfection and gas sensing, achieving higher efficiency and performance in far-UVC range applications;

➁ Showcased photonic integration using gallium arsenide (GaAs) and silicon nitride platforms for quantum physics and biosensing, enabling chiplet-based laser solutions;

➂ Highlighted UV-COLA project’s miniaturized UVC diode laser module for combating multidrug-resistant pathogens and participated in quantum technology symposia linking research to industrial use.

➀ Space Forge partners with United Semiconductors to develop semiconductor materials produced in space for quantum computing, power electronics, and sensors;

➁ Collaboration combines Space Forge's microgravity platform and United Semiconductors' III-V crystal growth expertise to onshore resilient supply chains;

➂ Aims to commercialize space-based semiconductor manufacturing and advance sustainable low-Earth orbit economies.

➀ Diamond Quanta is commercializing engineered diamond semiconductors, achieving n- and p-type doping through proprietary methods to surpass the thermal and electrical limits of SiC and GaN;

➁ Their platform targets high-performance applications in power electronics, quantum photonics, and extreme-environment sensors, delivering up to 50% system cooling reduction and 70% BOM savings;

➂ Collaborating with industry leaders and Silicon Catalyst, the company aims to scale production and validate diamond's role in next-gen electronics, optics, and quantum technologies.

➀ The article announces the finalists for the 2025 Elektra Awards across multiple categories, including Automotive/Hi-Rel Semiconductor, Consumer Semiconductor, Medical, and Power Systems;

➁ Notable companies featured in the shortlist include Microchip Technology, Nordic Semiconductor, NXP Semiconductors, Siemens EDA, and Navitas Semiconductor, highlighting advancements in GaN technology and EDA tools;

➂ Additional segments recognize educational support, manufacturing excellence, and rising stars, with the BrightSparks winners to be revealed at the event.

➀ Fraunhofer IAF developed a 70nm GaN transistor technology achieving record efficiency under satellite conditions, enabling compact active antennas for high-bitrate data transfer in Ka-, Q-, and W-bands;

➁ The technology demonstrates high linearity and power efficiency (58.6% peak efficiency at 38 GHz), meeting ESA standards for satellite communications, and aims to support resilient global networks;

➂ Results from projects like Magellan and GANYDEM170 will be showcased at EuMW 2025, alongside other GaN-based RF electronics advancements.

➀ Fraunhofer IAF developed 70nm GaN HEMT transistors with 58.6% power-added efficiency at 38 GHz, setting a record under satellite conditions;

➁ The technology enables compact active antennas for high-bitrate data transfers in Ka/Q/W-bands, supporting global satellite communication networks;

➂ Achievements validated under ESA standards and presented at EuMW 2025, highlighting applications in GEO/LEO satellites and 6G systems.

➀ Mojo Vision secures $75 million in Series B funding led by Vanedge Capital, supported by existing and new investors;

➁ Funds will accelerate commercialization of its advanced micro-LED platform targeting AI infrastructure and applications;

➂ The platform integrates 300mm silicon architecture, GaN-on-Silicon emitters, and quantum dots to optimize size, brightness, and power efficiency.

➀ Junior Professor Stefan Mönch at the University of Stuttgart has been awarded an ERC Starting Grant of €1.5 million to research highly efficient electrical energy conversion technologies;

➁ The project focuses on partial power processing (PPP) converters and multilevel converters to minimize energy losses in applications like electromobility and solid-state heat pumps, achieving efficiencies over 99%;

➂ Research explores cascading topologies and optimal voltage levels to extend applications to smart materials, soft robotics, and energy harvesting, supported by collaborations in projects like GaN4EmoBiL and COOLPOL.

➀ Dr. Stefan Mönch received a €1.5 million ERC Starting Grant to advance research on near-lossless electrical energy conversion using Partial-Power Processing (PPP) and multilevel converters, aiming to minimize energy losses in voltage transformations.

➁ The research targets applications like electromobility and solid-state heat pumps (using eco-friendly electrocaloric materials) and explores optimizing voltage stages and cascading topologies to maximize efficiency, building on GaN semiconductor expertise from prior projects.

➂ The project also investigates energy harvesting and smart materials for soft robotics, with potential to significantly enhance sustainable energy systems and reduce environmental impact.

➀ Power Integrations introduced a GaN-based reference design kit for solar race cars, achieving up to 95% efficiency and eliminating heatsink requirements for lightweight, compact auxiliary power systems;

➁ The 46W design, using InnoSwitch3-AQ ICs, supports burst power up to 80W and includes a complete blueprint for rapid integration into solar vehicles;

➂ Collaboratively tested with ETH Zurich’s racing team, the design exemplifies GaN’s potential in renewable energy and e-mobility applications.

➀ Power Integrations offers a free GaN-based PSU development kit for solar racing car teams, featuring up to 95% efficiency and a heatsink-free design;

➁ The RDK-85SLR delivers 46W continuous and 80W peak power, using a 900V INN3990CQ IC and automotive-grade components;

➂ The kit includes schematics, PCB guides, and supports student teams like ETH Zurich's aCentauri in the Bridgestone World Solar Challenge.

➀ The RF Front End (RFFE) market is projected to grow from $51.3 billion in 2024 to $69.7 billion by 2030, driven by 5G, consumer connectivity, and emerging 6G technologies;

➁ GaN technology is reshaping telecom infrastructure by replacing LDMOS, while automotive RF evolves with ADAS radars, UWB, and defense sectors adopt GaN for high-power broadband systems;

➂ Leading players like Qualcomm, Qorvo, and Infineon dominate key segments, alongside Chinese firms accelerating domestic RF solutions to reduce foreign dependency.

➀ EPC releases EPC91118 GaN motor drive for robotic joints, integrating control MCU, magnetic encoder, and power stage on a 32mm PCB;

➁ The 15-55V board uses three 100V EPC23104 half-bridge ICs, RS485 communication, and eliminates electrolytic capacitors via 100kHz PWM operation;

➂ Designed for robot wrists and drones, available via Digi-Key with ceramic-only DC-link for compactness and efficiency.

➀ EPC introduces a compact 180W GaN buck DC-DC evaluation board (EPC91109) supporting USB PD 3.1, delivering 12-20V output from 20-36V input with peak efficiency >98%;

➁ Utilizing four EPC2057 GaN HEMTs and Analog Devices' LTC7890 controller, the 24x24mm design operates without heatsinks or airflow at 970kHz switching frequency;

➂ Targets laptop and battery-powered applications, achieving full 180W output (14.3A at 12V) through two-phase interleaved topology.

➀ Renesas launched three 650V GaN power transistors (TP65H030G4PRS/WS/QS) in TOLT, TO-247, and TOLL packages for server power supplies and e-mobility chargers, featuring silicon-compatible gate drive and enhanced thermal management;

➁ The Gen IV plus cascode design combines depletion-mode GaN HEMT and Si MOSFET, achieving 30mΩ on-resistance, a 4V threshold voltage, and 20% improvement in R_DS(on)·C_oss product;

➂ A 4.2kW totem-pole PFC evaluation kit (RTDTTP4200W066A-KIT) is provided, following Navitas Semiconductor's recent motor drive-focused GaN solution.

➀ Mouser Electronics signed a global distribution agreement with Ampleon, a Dutch RF specialist, to supply advanced RF power devices including GaN and LDMOS ICs;

➁ Key products include ART-series LDMOS transistors (1600W-2000W, 1-425MHz) for broadcast/communications, BLF981/BLF981S for rugged applications up to 1400MHz, and CLP24H4S30P GaN-SiC HEMT (30W) for industrial/medical systems;

➂ Ampleon's portfolio targets 5G infrastructure, industrial, medical, and broadcast sectors with high-efficiency, thermally stable solutions in compact packages.

➀ Prof. Dr. Mario Ragwitz is appointed as the spokesperson of the Fraunhofer Excellence Cluster CINES, succeeding Prof. Dr. Hans-Martin Henning, who led the cluster since its founding in 2019.

➁ CINES involves ten Fraunhofer institutes focusing on integrated energy systems, including energy system analysis, digitalization, power electronics, and heat, emphasizing collaboration to address energy transition challenges.

➂ Ragwitz highlights the cluster's role in developing solutions for decarbonizing industrial, heating, and transportation sectors, referencing projects like the TransHyDE hydrogen initiative and the need for systemic infrastructure integration.