Recent #memory news in the semiconductor industry
12/27/2024, 06:49 AM UTC
新型合金助力更好的MRAM存储New Alloy For Better MRAM Memory
➀ 先进材料研究院（WPI-AIMR）的研究人员开发了一种具有高垂直磁各向异性（PMA）的钴锰铁合金薄膜，这对于MRAM设备至关重要；➁ 这种合金首次表现出强大的大PMA，解决了现有合金的挑战；➂ 该研究有助于开发基于自旋电子学的创新内存技术，以创造可持续的未来。➀ Researchers at the Advanced Institute for Materials Research (WPI-AIMR) have developed a cobalt-manganese-iron alloy thin film with high perpendicular magnetic anisotropy (PMA), crucial for MRAM devices; ➁ This alloy demonstrates a strong large PMA for the first time, addressing the challenges of current alloys; ➂ The research contributes to the development of innovative spintronics-based memory technologies for a sustainable future.
12/27/2024, 05:34 AM UTC
全球最快的CFexpress 4.0卡World’s Fastest CFexpress 4.0 Card
➀ 慧荣科技推出了全球最快的CFexpress 4.0 Type A卡金系列；➁ 该卡读写速度分别高达1800 MB/s和1650 MB/s；➂ 支持8K RAW视频捕捉，专为专业创作者设计。➀ Lexar has launched the world's fastest CFexpress 4.0 Type A Card Gold Series; ➁ The card offers read speeds of up to 1800 MB/s and write speeds of up to 1650 MB/s; ➂ It supports 8K RAW video capture and is designed for professional creators.
12/27/2024, 01:07 AM UTC
SK海力士2025年准备16层HBM3E内存量产，HBM4发布前夕SK hynix preps 16-Hi HBM3E memory mass production in 2025, just before HBM4 makes its debut
➀ SK海力士正在为16层HBM3E内存的量产做准备；➁ 公司正在整合新设备并优化现有设施；➂ 已开始生产测试，预计2025年上半年供应。➀ SK hynix is preparing for mass production of its 16-Hi HBM3E memory; ➁ The company is integrating new equipment and optimizing facilities; ➂ Production tests have begun, with supply expected in the first half of 2025.
12/26/2024, 10:14 AM UTC
NVIDIA下一代GeForce RTX 5090 PCB再次泄露：这次搭载了三星28Gbps GDDR7芯片NVIDIA's next-gen GeForce RTX 5090 PCB leaked again: this time with Samsung 28Gbps GDDR7 chips
➀ 泄露的NVIDIA GeForce RTX 5090 PCB展示了GB202 GPU和三星28Gbps GDDR7内存模块；➁ 该卡预计将配备32GB GDDR7内存，通过512位接口提供1792GB/秒的带宽；➂ PCB包括28个VRM和一个16针电源连接器。➀ A leak reveals NVIDIA's GeForce RTX 5090 PCB featuring the GB202 GPU and Samsung's 28Gbps GDDR7 memory modules; ➁ The card is expected to have 32GB of GDDR7 memory on a 512-bit interface, offering 1792GB/sec bandwidth; ➂ The PCB includes 28 VRMs and a single 16-pin power connector.
12/24/2024, 02:00 PM UTC
如果我是英特尔CEO，我会怎么做？What would you do if you were the CEO of Intel?
➀ 英特尔在技术宣布中转向更加透明的策略；➁ 英特尔PowerVia与台积电Super Power Rail之间的竞争；➂ 安迪·格鲁夫保持‘适度忧虑’的哲学。➀ Intel's shift to a more transparent strategy in technology announcements; ➁ The competition between Intel's PowerVia and TSMC's Super Power Rail; ➂ Andy Grove's philosophy of maintaining a 'healthy amount of paranoia'.
12/24/2024, 05:05 AM UTC
缅怀一位伟大的科技界人物：Gordon Mah UngWe Lost a Great One Gordon Mah Ung
➀ 文章缅怀了已故的科技记者Gordon Mah Ung；➁ 作者反思了Gordon对科技行业的影响以及未能表达感激的个人遗憾；➂ 作者提到表达感激的重要性以及家庭对胰腺癌研究的慈善关注。➀ The article commemorates the passing of Gordon Mah Ung, a respected technology journalist; ➁ The author reflects on the impact Gordon had on the technology industry and the personal regret of not expressing gratitude; ➂ The author mentions the importance of expressing gratitude and the family's philanthropic focus on pancreatic cancer research.
12/23/2024, 01:02 AM UTC
埃德嗅到欧洲的机会Ed Sniffs Euro-Wonga
➀ 埃德认为欧盟的‘ECS经纪’是一个鼓励英国技术人才获取欧洲资金的方法；➁ 他已经说服部门为研究人员、发明家、初创企业和中小企业参加这些活动提供预算；➂ 他正在探索斯肯索普量子利用欧洲发展基金的机会。➀ Ed sees the EU's 'ECS Brokerage' as a way to encourage UK techies to access European funds; ➁ He has convinced the Department to allocate a budget for researchers, inventors, startups, and SMEs to attend these events; ➂ He is exploring opportunities for Scunthorpe Quantum to benefit from European development funds.
12/21/2024, 03:02 AM UTC
替代SRAM，新选择！Alternative to SRAM: The New Choice!
<p>➀ SRAM几十年来一直被用作高性能计算架构中的嵌入式缓存，但其位密度扩展速度已经放缓，并且受到待机功率问题的困扰。</p><p>➁ 自旋轨道扭矩（SOT）MRAM具有低待机功耗、GHz级切换速度、可忽略不计的泄漏、几乎无限的耐用性、高可靠性和可扩展性等优势，使其成为SRAM的有希望的替代品。</p><p>➂ SOT-MRAM使用磁性隧道结（MTJ）作为其基本构建块，其中磁化方向可以是垂直或平面，这会影响读写操作。</p><p>➃ 最近，SOT-MRAM技术的进步，包括imec的改进，已经证明了高速切换和耐用性，解决了缓存应用中的关键挑战。</p><p>➄ Imec已经开发了无场切换、低动态功耗和将SOT-MRAM设备扩展到极限的创新解决方案，这对于高密度SRAM应用是一个里程碑。</p><p>➅ 正在探索进一步优化性能和可靠性参数，如保留率和写入错误率，以使SOT-MRAM更接近实际规格。</p><p>➆ Imec还展示了一种用于MTJ的创新复合自由层，这提高了SOT-MRAM设备的可靠性，并降低了对外部磁扰动的敏感性。</p><p>➀ SRAM has been used in high-performance computing architectures as embedded cache for decades, but its bit density expansion has slowed down and is affected by standby power issues.</p><p>➁ Spin Orbit Torque (SOT) MRAM offers advantages like low standby power, GHz-level switching speed, negligible leakage, almost infinite endurance, high reliability, and scalability, making it a promising alternative to SRAM.</p><p>➂ SOT-MRAM uses magnetic tunnel junctions (MTJ) as its basic building block, where the magnetic orientation can be vertical or in-plane, affecting the read and write operations.</p><p>➃ Recent advancements in SOT-MRAM technology, including improvements by imec, have demonstrated high switching speeds and durability, addressing key challenges in cache applications.</p><p>➄ Imec has developed innovative solutions for field-free switching, low dynamic power consumption, and scaling SOT-MRAM devices to the limit, making it a milestone for high-density SRAM applications.</p><p>➅ Further optimization of performance and reliability parameters, such as retention rate and write error rate, is being explored to bring SOT-MRAM closer to real-world specifications.</p><p>➆ Imec has also presented a novel composite free layer for MTJ, which improves the reliability of SOT-MRAM devices and reduces sensitivity to external magnetic disturbances.</p>
12/21/2024, 03:01 AM UTC
替代SRAM，新选择！Alternative to SRAM: The New Choice!
<p>➀ SRAM几十年来一直被用作高性能计算架构中的嵌入式缓存，但其位密度扩展速度已经放缓，并且受到待机功率问题的困扰。</p><p>➁ 自旋轨道扭矩（SOT）MRAM具有低待机功耗、GHz级切换速度、可忽略不计的泄漏、几 乎无限的耐用性、高可靠性和可扩展性等优势，使其成为SRAM的有希望的替代品。</p><p>➂ SOT-MRAM使用磁性隧道结（MTJ）作为其基本构建块，其中磁化方向可以是垂直或平面，这会影响读写操作。</p><p>➃ 最近，SOT-MRAM技术的进步，包括imec的改进，已经证明了高速切换和耐用性，解决了缓存应用中的关键挑战。</p><p>➄ Imec已经开发了无场切换、低动态功耗和将SOT-MRAM设备扩展到极限的创新解决方案，这对于高密度SRAM应用是一个里程碑。</p><p>➅ 正在探索进一步优化性能和可靠性参数，如保留率和写入错误率，以使SOT-MRAM更接近实际规格。</p><p>➆ Imec还展示了一种用于MTJ的创新复合自由层，这提高了SOT-MRAM设备的可靠性，并降低了对外部磁扰动的敏感性。</p><p>➀ SRAM has been used in high-performance computing architectures as embedded cache for decades, but its bit density expansion has slowed down and is affected by standby power issues.</p><p>➁ Spin Orbit Torque (SOT) MRAM offers advantages like low standby power, GHz-level switching speed, negligible leakage, almost infinite endurance, high reliability, and scalability, making it a promising alternative to SRAM.</p><p>➂ SOT-MRAM uses magnetic tunnel junctions (MTJ) as its basic building block, where the magnetic orientation can be vertical or in-plane, affecting the read and write operations.</p><p>➃ Recent advancements in SOT-MRAM technology, including improvements by imec, have demonstrated high switching speeds and durability, addressing key challenges in cache applications.</p><p>➄ Imec has developed innovative solutions for field-free switching, low dynamic power consumption, and scaling SOT-MRAM devices to the limit, making it a milestone for high-density SRAM applications.</p><p>➅ Further optimization of performance and reliability parameters, such as retention rate and write error rate, is being explored to bring SOT-MRAM closer to real-world specifications.</p><p>➆ Imec has also presented a novel composite free layer for MTJ, which improves the reliability of SOT-MRAM devices and reduces sensitivity to external magnetic disturbances.</p>
12/19/2024, 08:39 PM UTC
CXL技术终于在2025年到来CXL is Finally Coming in 2025
➀ 计算表达式链接（CXL）技术预计将在2025年从利基市场转向主流应用；➁ CXL对内存扩展的支持是主要驱动力，现在有各种服务器和内存解决方案可用；➂ CXL 2.0和未来的PCIe/CXL版本将实现更高级的应用，如交换和动态内存分配。➀ Compute Express Link (CXL) technology is expected to move from a niche to mainstream use in 2025; ➁ CXL's support for memory expansion is a significant driver, with various server and memory solutions now available; ➂ CXL 2.0 and future generations of PCIe/CXL will enable more advanced use cases like switching and dynamic memory allocation.
12/19/2024, 02:00 PM UTC
金士顿FURY Renegade DDR5 RGB限量版48GB评测Kingston FURY Renegade DDR5 RGB Limited Edition 48GB Review
➀ 金士顿推出FURY Renegade DDR5 RGB限量版48GB套装，速度达8,000MT/s，配备RGB灯效；➁ 设计灵感来源于汽车和赛车，外观类似碳纤维质感；➂ 支持三个XMP 3.0配置文件，并提供终身保修。➀ Kingston introduces the FURY Renegade DDR5 RGB Limited Edition, a 48GB kit with 8,000MT/s speed and RGB lighting; ➁ The design is inspired by cars and racing, featuring a carbon fiber look; ➂ The modules support three XMP 3.0 profiles and come with a lifetime warranty.
12/19/2024, 06:11 AM UTC
IDC 2025年半导体趋势预测IDC’s Semiconductor Trends For 2025
➀ 预计内存增长将超过24%，主要由HBM3和HBM3e等高端产品推动，HBM4预计将在2025年下半年推出。非内存预计增长13%，受AI服务器、高端手机IC和WiFi7对先进节点IC的需求驱动。➁ 亚洲-太平洋IC设计市场预计将增长15%，随着库存水平稳定、个人设备需求增加以及AI计算扩展到广泛应用。➂ 台积电在Foundry 1.0和2.0中的市场份额预计将增加，随着2nm和3nm等先进节点的扩张。➃ 预计2nm和3nm的生产将加速，台积电和三星将领先。➄ 预计晶圆代工利用率将增加，2025年是2nm量产的关键年份。➅ 中国的封装和测试市场份额预计将上升，2025年之后FOPLP将快速增长。➀ Memory growth is expected to exceed 24% due to the increasing adoption of high-end products like HBM3 and HBM3e, with HBM4 introduction in H2 2025. Non-memory is projected to grow 13% driven by advanced node ICs for AI servers, high-end mobile phone ICs, and WiFi7. ➁ The Asia-Pacific IC design market is set to grow 15% as inventory levels stabilize, personal device demand rises, and AI computing expands. ➂ TSMC's market share is projected to increase in Foundry 1.0 and 2.0, with the expansion of advanced nodes like 2nm and 3nm. ➃ 2nm and 3nm production is expected to accelerate, with TSMC and Samsung leading the way. ➄ Foundry capacity utilization is expected to increase, and 2025 is critical for 2nm mass production. ➅ China's packaging and testing market share is set to rise, and FOPLP will grow rapidly post-2025.
12/17/2024, 02:00 PM UTC
NVIDIA RTX 5080 据称采用更快的 30 Gbps GDDR7 模块，提供 960 GB/s 的带宽 — 剩余的 Blackwell 系列预计将继续使用较慢 的 28 Gbps 内存Nvidia RTX 5080 allegedly adopts faster 30 Gbps GDDR7 modules, delivering 960 GB/s of bandwidth — The remaining Blackwell lineup is expected to stick with slower 28 Gbps memory
➀ NVIDIA 的 RTX 5080 据称配备 30 Gbps 的 GDDR7 内存，提供 960 GB/s 的带宽；➁ 剩余的 Blackwell 系列预计将继续使用较慢的 28 Gbps 模块；➂ NVIDIA 的 RTX 50 系列预计将成为首个使用 GDDR7 内存的产品➀ Nvidia's RTX 5080 rumored to feature 30 Gbps GDDR7 memory for 960 GB/s bandwidth; ➁ Remaining Blackwell lineup to use slower 28 Gbps modules; ➂ Nvidia's RTX 50 series expected to be first with GDDR7 memory
12/17/2024, 01:00 AM UTC
1960年美国晶体管月销量平均为一千万US Transistor Sales Average Ten Million A Month
➀ 1960年前10个月，美国制造商每月平均销售晶体管1000万只，价值近900万英镑。这比1959年的每月平均750万只增长了33%。 ➁ 《电子时报》1961年1月25日的一篇报道提到，1960年1月至10月，美国制造商销售了近1.02亿只晶体管，10月份的总销量为1220万只。 ➂ 1960年前10个月美国工厂晶体管销售额达到8800万英镑，全年预计将达到约1亿英镑。➀ During the first 10 months of 1960, US manufacturers averaged 10 million transistors sold per month, totaling nearly £9 million in value. This represented a 33% increase from the monthly average of 7.5 million units in 1959. ➁ The story from Electronics Weekly's January 25, 1961, issue mentioned that US manufacturers sold nearly 102 million transistors between January and October 1960, with an October total of 12.2 million units. ➂ The value of US factory transistor sales in the first 10 months of 1960 was £88 million, with a projection for the full year to reach around £100 million.
12/16/2024, 12:20 PM UTC
蔡崇信与埃隆·马斯克联手机器人C.C.Wei and Elon Musk hooking up on robots
➀ 蔡崇信与埃隆·马斯克正在合作开发多功能机器人；➁ 马斯克计划于2026年推出名为Optimus的多功能人形机器人；➂ 蔡崇信强调无人机和人工智能在水资源、电力等公用事业领域的应用的重要性。➀ C.C. Wei and Elon Musk are collaborating on multifunctional robots; ➁ Musk plans to launch a multifunctional humanoid robot named Optimus in 2026; ➂ Wei emphasizes the importance of drones and AI applications in utilities such as water and electricity provision.
12/16/2024, 03:09 AM UTC
Lexar发布超低延迟DDR5-6000 CL26内存，称其“理想适用于9800X3D”Lexar unleashes ultra-low latency DDR5-6000 CL26 memory, says it's 'ideal for 9800X3D'
➀ Lexar推出了具有超低延迟的ARES DDR5-6000 CL26内存；➁ 适用于游戏，尤其是与9800X3D处理器一起使用；➂ 比现有的CL30内存提供10%的性能提升➀ Lexar introduces the ARES DDR5-6000 CL26 memory with ultra-low latency; ➁ Ideal for gaming, especially with the 9800X3D processor; ➂ Offers a 10% performance improvement over existing CL30 memory
12/13/2024, 02:15 PM UTC
英国在塑料电子领域的领先地位UK Leads In Plastic Electronics
➀ 英国在塑料电子领域是全球的领导者；➁ 曼德尔森勋爵强调了为行业制定路线图的重要性，以从尖端技术走向大 众市场；➂ 斯旺西大学和威尔士印刷与涂覆中心参与开发使用塑料电子的新产品线。➀ The UK has been a global leader in the Plastic Electronics sector; ➁ Lord Mandelson emphasized the importance of a roadmap for the industry to move from cutting-edge to mass market; ➂ Swansea University and the Welsh Centre for Printing and Coating are involved in developing new product lines using plastic electronics.
12/13/2024, 09:18 AM UTC
利用人工智能实现更好的光伏材料Using AI to Achieve Better Photovoltaic Materials
➀ 卡尔鲁厄理工学院的研究人员通过人工智能和高通量合成找到了新的有机分子，以提高钙钛矿太阳能电池的效率。➁ 开发的策略可以应用于其他材料研究领域，如新型电池材料。➂ 该团队使参考太阳能电池的效率提高了2%，达到26.2%。➀ Researchers at KIT have found new organic molecules to improve the efficiency of perovskite solar cells with the help of AI and high-throughput synthesis. ➁ The strategy developed can be applied to other areas of material research, such as new battery materials. ➂ The team achieved a two percent efficiency increase for a reference solar cell, reaching 26.2 percent.
12/13/2024, 06:26 AM UTC
imec提出基于IGZO通道的3D CCD，用于CXL缓冲存储器Imec proposes 3D CCD with IGZO channel for CXL buffer memory
➀ imec提出一种基于IGZO通道的3D集成CCD，用于CXL缓冲存储器；➁ 该存储器在平面概念结构上运行，存储容量为142位；➂ imec预计3D CCD内存密度将超越DRAM限制，到2030年，其比特密度可能比2D DRAM高五倍。➀ Imec proposes a 3D integrated CCD with IGZO channel for CXL buffer memory; ➁ The memory operates on a planar proof-of-concept structure with a storage capacity of 142 bits; ➂ Imec expects the 3D CCD memory density to scale beyond DRAM limits, with potential for five times more bit density than 2D DRAM by 2030.
12/13/2024, 06:01 AM UTC
巴赫曼MX200处理器第三代将于2025年上半年发布3rd Gen Bachmann MX200 processor out in H1 2025
➀ 巴赫曼的MX200处理器第三代预计将于2025年上半年发布；➁ 新的MX215处理器模块比MX214 CPU具有更多的以太网和CAN接口；➂ 新一代MX系列基于VxWorks 7操作系统，具有安全存储密钥和密码的功能。➀ Bachmann's third-generation MX200 processor series is set to launch in the first half of 2025; ➁ The new MX215 processor module features more Ethernet and CAN interfaces than the MX214 CPU; ➂ The next-generation MX series is based on VxWorks 7 with secure storage capabilities for keys and passwords.
12/12/2024, 04:00 PM UTC
半导体市场展望：2024年增长强劲，2025年或面临挑战Thanks for the Memories
➀ WSTS预测2024年半导体市场增长19%，主要得益于内存市场81%的增长；➁ 汽车和工业领域的公司正面临收入下降；➂ 英伟达因AI处理器收入增长135%，而内存公司也报告了显著的收入增长。➀ The WSTS forecasts a 19% growth in the semiconductor market for 2024, primarily driven by a 81% growth in the memory segment; ➁ Companies in the automotive and industrial sectors are experiencing revenue declines; ➂ Nvidia's revenue grew 135% due to AI processors, while memory companies reported substantial revenue gains.
12/12/2024, 02:00 PM UTC
寓言：牛仔CEO的故事Fable: The Cowboy CEO
➀ 这位CEO以他的十加仑帽子和牛仔靴闻名，创立的公司收购了60多家电信公司，市值一度高达1860亿美元。➁ 在一个季度亏损的情况下，公司报告了138亿美元的净利润。➂ 他从公司借款4.08亿美元来弥补保证金调用，最终违约，并在监狱中度过了13年。➀ The CEO, known for his ten gallon hats and cowboy boots, founded a company that acquired over 60 telecoms companies and had a peak market cap of $186 billion. ➁ In one quarter with a loss, the company reported a net profit of $1.38 billion. ➂ He borrowed $408 million from the company to cover margin calls and defaulted on the debt, spending 13 years in jail.
12/11/2024, 09:44 AM UTC
CEA-Leti展示与22纳米FD-SOI节点兼容的嵌入式FeRAM平台CEA-Leti Demonstrates Embedded FeRAM Platform Compatible with 22 nm FD-SOI Node
➀ CEA-Leti展示了可扩展的HfZrO2基FeRAM平台，该平台集成在22纳米FD-SOI节点的后端工艺中，这是铁电存储技术的一项重大进步，提高了嵌入式应用的扩展性，并将FeRAM定位为先进节点具有竞争力的存储解决方案。 ➁ 当前的嵌入式FeRAM产品使用钙钛矿材料，这些材料与CMOS不兼容且无法扩展到130纳米以上。新的基于HfO2的薄膜与CMOS兼容且可扩展 ，为嵌入式FeRAM提供了新的可能性。 ➂ 该技术预计将使嵌入式系统（如物联网、移动设备和边缘计算）中的内存解决方案更快、更节能且成本效益更高。➀ CEA-Leti has demonstrated a scalable hafnia-zirconia-based FeRAM platform integrated into the 22 nm FD-SOI node's BEOL. This is a significant advance in ferroelectric memory technology, improving scalability for embedded applications and positioning FeRAM as a competitive memory solution for advanced nodes. ➁ Current embedded FeRAM products use perovskite materials that are not CMOS compatible and cannot scale beyond 130 nm. The new HfO2-based thin films are CMOS compatible and scalable, offering new possibilities for embedded FeRAM. ➂ The technology is expected to enable faster, more energy-efficient, and cost-effective memory solutions in embedded systems like IoT, mobile devices, and edge computing.
12/10/2024, 09:12 AM UTC
三星准备1c DRAM大规模生产，在HBM4内存中保持竞争优势Samsung gearing up for 1c DRAM mass production, its competitive edge in HBM4 memory
➀ 三星正在为其平泽工厂4号（P4）的1c DRAM大规模生产做准备；➁ 1c DRAM是第六代10纳米级技术，预计将在2025年全面商业化；➂ 三星希望通过这项新技术提升其在人工智能市场的竞争力。➀ Samsung is preparing for 1c DRAM mass production at its Pyeong Plant 4; ➁ The 1c DRAM is a 6th generation 10nm-class technology expected to be fully commercialized in 2025; ➂ Samsung aims to enhance its competitiveness in the AI market with the new technology.
12/10/2024, 06:20 AM UTC
SEMI：半导体制造设备销售额达到1130亿美元，创历史新高Equipment sales hit record $113bn, says SEMI
➀ SEMI预测2024年半导体制造设备销售额将同比增长6.5%，达到1130亿美元，预计2025年为1210亿美元，2026年为1390亿美元。➁晶圆厂设备（WFE）部门预计将增长5.4%，达到1010亿美元，受DRAM、HBM和中国推动。➂后端设备销售预计将激增，测试设备销售在2025年增长14.7%，在2026年增长18.6%。➀ SEMI forecasts semiconductor manufacturing equipment sales to grow 6.5% year-on-year to $113 billion in 2024, with projections of $121 billion for 2025 and $139 billion for 2026. ➁ The wafer fab equipment (WFE) segment is expected to grow 5.4% to $101 billion in 2024, driven by DRAM, HBM, and China. ➂ Back-end equipment sales are projected to surge, with test equipment sales increasing 14.7% in 2025 and 18.6% in 2026.
12/10/2024, 05:11 AM UTC
三星完成下一代400层NAND技术开发，2025年初推出1TB 400层TLC NANDSamsung finishes development on next-gen 400-layer NAND, 1Tb 400-layer TLC NAND in early 2025
➀ 三星电子成功开发出400层NAND技术，超越了SK海力士的321层NAND；➁ 400层NAND将在2025年下半年开始量产；➂ 三星计划在2025年2月的ISSCC 2025会议上详细介绍其新的1TB 400层TLC NAND。➀ Samsung Electronics has developed a 400-layer NAND technology, surpassing SK hynix's 321-layer NAND; ➁ The 400-layer NAND will enter mass production in the second half of 2025; ➂ Samsung plans to provide details on its new 1Tb 400-layer TLC NAND at the ISSCC 2025.
12/09/2024, 03:51 PM UTC
英特尔Arc B580在早期基准测试中与RTX 4060和RX 7600交锋 —— B580在OpenCL和Vulkan工作负载中比A580快30%Intel Arc B580 trades blows with the RTX 4060 and RX 7600 in early benchmarks — B580 beats A580 by up to 30% in OpenCL and Vulkan workloads
➀ 英特尔Arc B580在早期基准测试中比其前代产品A580快30%以上；➁ 基准测试在OpenCL和Vulkan API上完成；➂ Arc B580的价格低于RTX 4060，但性能快10%。➀ Intel's Arc B580 outperforms its predecessor, A580, by up to 30% in early benchmarks; ➁ The benchmarks were conducted across the OpenCL and Vulkan APIs; ➂ The Arc B580 is 10% faster than the RTX 4060 at a lower price point.
12/09/2024, 06:30 AM UTC
英国原子能署和布里斯托尔大学开发出首枚碳-14钻石电池UKAEA and Bristol University make first carbon-14 diamond battery
➀ 英国原子能署和布里斯托尔大学的研究人员共同开发出世界上首个碳-14钻石电池；➁ 该电池利用放射 性同位素碳-14产生，具有数千年的潜在寿命；➂ 该技术可应用于医疗设备和极端环境，提供数十年的连续电源。➀ Scientists and engineers from UKAEA and the University of Bristol have created the world's first carbon-14 diamond battery; ➁ The battery leverages the radioactive isotope carbon-14 to produce a diamond battery with a potential lifespan of thousands of years; ➂ The technology could be used in medical devices and extreme environments, providing continuous power for decades.
12/09/2024, 06:02 AM UTC
Farnell年终促销Farnell end-of-year sale
➀ 慧荣科技全球宣布在EMEA地区推出测试与工具（T&T）产品的年终促销活动；➁ 该促销活动包括广泛测试与工具产品的显著折扣；➂ 促销活动将于2025年1月31日结束。➀ Farnell Global has announced end-of-year offers on Test & Tools (T&T) products across the EMEA; ➁ The sale includes significant discounts on a wide range of T&T products; ➂ The promotional period ends on January 31, 2025.
12/06/2024, 01:23 PM UTC
被暗杀的联合健康CEO涉嫌使用AI拒绝患病者保险Assassinated UnitedHealthcare CEO allegedly used AI to deny sick people coverage
➀ 一项集体诉讼指控联合健康保险公司使用一个有缺陷的算法拒绝患者保险，由两名现已去世的个人提起。➁ 联合健康保险公司首席执行官布莱恩·汤普森本周在曼哈顿中城被杀，嫌疑人目前仍在逃。➂ 诉讼声称联合健康保险公司促使员工使用一个错误率约为90%的算法来拒绝保险。➀ A class-action lawsuit alleges that UnitedHealthcare uses a faulty algorithm to deny patient coverage, filed by two now-deceased individuals. ➁ UnitedHealthcare CEO Brain Thompson was killed in Midtown Manhattan earlier this week, and the suspect is currently on the run. ➂ The lawsuit claims UnitedHealthcare pushed employees to use an algorithm with a 90% error rate to deny coverage.
12/05/2024, 04:45 PM UTC
Team Group发布新款T-Force Xtreem CKD DDR5内存Team Group launches new T-Force Xtreem CKD DDR5 memory
➀ Team Group的T-Force品牌推出了新款高性能内存套件Xtreem CKD DDR5 8800（2x 24 GB）；➁ 该内存模块采用客户端时钟驱动（CKD）技术，提高了DDR5的速度和超频潜力；➂ 设计包括2毫米厚的铝合金散热器和10层PCB，用于高效散热和稳定性。➀ Team Group's T-Force brand has launched a new high-performance memory kit, the Xtreem CKD DDR5 8800 (2x 24 GB); ➁ The memory module features Client Clock Driver (CKD) technology for enhanced DDR5 speeds and overclocking potential; ➂ The design includes a 2mm-thick aluminium alloy heat spreader and 10-layer PCB for efficient heat dissipation and stability.
12/05/2024, 08:53 AM UTC
首个可编程连接模块First Programmable Connectivity Module
➀ 本文讨论了首个可编程连接模块，这是电子行业的一项重大发展；➁ 可能探讨了其功能和潜在应用；➂ 该模块可能与连接技术方面的进步有关，影响游戏、人工智能和汽车等各个领域。➀ The article discusses the first programmable connectivity module, a significant development in the electronics industry; ➁ It likely explores its features and potential applications; ➂ The module could be related to advancements in connectivity technology, impacting various sectors such as gaming, AI, and automotive.
12/04/2024, 07:22 AM UTC
伊斯普特亚斯放弃收购 碳纳米管制造商JEIO的计划Isu Petasys gives up plan to buy JEIO
➀ 伊斯普特亚斯已放弃收购碳纳米管制造商JEIO的计划；➁ 此决定由伊斯普特亚斯集团董事长金相奉亲自下令；➂ 伊斯普特亚斯将放弃已支付的15.8亿韩元订金。➀ Isu Petasys has abandoned its plan to acquire carbon nanotube manufacturer JEIO; ➁ The decision was personally ordered by Kim Sang Beom, the chairman of Isu Group; ➂ Isu Petasys will forgo the 15.8 billion won deposit that was already paid.
12/04/2024, 06:18 AM UTC
X-FAB提供110nm BCD-on-SOI上的闪存IP和EEPROMX-FAB supplying Flash IP + EEPROM on 110nm BCD-on-SOI
➀ X-FAB在其110nm BCD-on-SOI平台上提供32kByte容量的SONOS嵌入式闪存IP；➁ 该IP包括额外的4kbit EEPROM；➂ 该解决方案旨在用于汽车、医疗和工业应用。➀ X-FAB is supplying 32kByte capacity SONOS embedded Flash IP on its 110nm BCD-on-SOI platform; ➁ The IP includes an additional 4kbit EEPROM; ➂ The solution is designed for automotive, medical, and industrial applications.
12/03/2024, 07:42 AM UTC
HBM需求激增超越供应：为何美光科技是最大受益者HBM Demand Is Surging Past Supply: Why Micron Is The Biggest Beneficiary
1、HBM需求激增，预计从2023年的40亿美元增长到2025年超过250亿美元；2、美光科技2024财年收入同比增长62%，由AI需求驱动；3、行业产能减少和AI需求稳定了周期性市场。1. HBM demand is skyrocketing, projected to grow from $4B in 2023 to over $25B by 2025; 2. Micron's FY2024 revenue rose 62% YoY, driven by AI demand; 3. Reduced industry capacity and AI demand are stabilizing the cyclical market.
12/03/2024, 07:23 AM UTC
威廉·布克纳学院1月开设14个商业工程学士新课程14 New Study Programs in Bachelor of Business Engineering at Wilhelm Büchner Hochschule Starting January
➀ 威廉·布克纳学院将从1月份开始提供14个商业工程学士新课程；➁ 这些课程旨在为在职学生提供各自职业领域的进一步资格；➂ 课程涵盖了车辆技术、信息技术、塑料技术、人工智能、食品、物流、机电、医疗技术和工艺技术等多个主题。➀ Wilhelm Büchner Hochschule will offer 14 new study programs in Business Engineering starting from January; ➁ The programs aim to provide working students with further qualifications in their respective professional fields; ➂ The courses cover various topics such as vehicle technology, informatics, plastics technology, artificial intelligence, food, logistics, mechatronics, medical technology, and process technology.
12/02/2024, 09:29 PM UTC
科赛尔正在开发Vengeance DDR5 CUDIMM内存，为Z890主板做准备Corsair is working on Vengeance DDR5 CUDIMM memory, ready for Z890 motherboards
➀ 科赛尔正在开发新的Vengeance DDR5 CUDIMM内存模块；➁ 这些模块将配备RGB灯条，并提供黑白两种颜色；➂ 套件将提供高达10,000MT/s的速度，并兼容Z890主板。➀ Corsair is developing the new Vengeance DDR5 CUDIMM memory modules; ➁ The modules will feature RGB lighting and be available in black and white; ➂ The kits will offer speeds up to 10,000MT/s and are compatible with Z890 motherboards.
12/02/2024, 06:00 PM UTC
Breker如何帮助解决RISC-V认证问题How Breker is Helping to Solve the RISC-V Certification Problem
➀ RISC-V核心的兴起和认证的挑战；➁ Breker验证系统在认证过程中的作用；➂ 认证RISC-V ISA实现的复杂 性以及RISC-V国际组织的努力。➀ The rise of RISC-V cores and the challenges of certification; ➁ The role of Breker Verification Systems in the certification process; ➂ The complexity of certifying RISC-V ISA implementations and the efforts of RISC-V International.
11/26/2024, 02:29 AM UTC
NVIDIA将使用三星GDDR7内存芯片为下一代GeForce RTX 50系列GPUNVIDIA reportedly using Samsung GDDR7 memory chips for next-gen GeForce RTX 50 series GPUs
➀ NVIDIA将为即将推出的GeForce RTX 50系列GPU使用三星的新GDDR7内存芯片；➁ RTX 50系列将配备28Gbps和32Gbps的GDDR7内存；➂ 三星的GDDR7内存芯片将在2025年初用于NVIDIA的GeForce RTX 50系列GPU。➀ NVIDIA is set to use Samsung's new GDDR7 memory chips for its upcoming GeForce RTX 50 series GPUs; ➁ The RTX 50 series will feature both 28Gbps and 32Gbps GDDR7 memory; ➂ Samsung's GDDR7 memory chips will be used by NVIDIA's GeForce RTX 50 series GPUs in early 2025.
11/26/2024, 12:05 AM UTC
DDR5超频世界纪录再次被打破：Patriot Viper Xtreme 5 RAM达到惊人的12,611.6MT/sDDR5 OC world record broken again: blistering 12,611.6MT/s with Patriot Viper Xtreme 5 RAM
➀ 超频者'snakeeyes'使用Patriot Viper Xtreme 5 RAM创造了12,611.6MT/s的新内存超频世界纪录；➁ 该纪录是在ASRock Z890 Taichi OCF主板上使用液氮冷却实现的；➂ 现在该配置在HWBOT的内存频率排名中位列第一。➀ Overclocker 'snakeeyes' sets a new memory OC world record with 12,611.6MT/s using Patriot Viper Xtreme 5 RAM; ➁ The record was achieved with LN2 cooling on an ASRock Z890 Taichi OCF motherboard; ➂ The setup now ranks #1 on HWBOT's memory frequency rankings.
11/23/2024, 10:19 AM UTC
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➀ 您的免费试用Feed URL已于2024年11月23日星期六到期；➁ 请免费创建新的URL或升级您的订阅计划；➂ 在<a href="https://www.mysitemapgenerator.com/rss/index.html">MySitemapGenerator.com</a>获取持久URL➀ Your trial feed URL has expired on Sat Nov 23, 2024; ➁ Please create a new one for free or upgrade your subscription plan; ➂ Get a persistent URL at <a href="https://www.mysitemapgenerator.com/rss/index.html">MySitemapGenerator.com</a>
11/22/2024, 07:37 AM UTC
SK海力士开启321层NAND闪存芯片生产SK Hynix begins 321-layer NAND production
➀ SK海力士已开始生产其321层NAND闪存芯片；➁ 该芯片在行业中具有最多的层数；➁ 该产品于去年8月的Flash Summit 2023上首次亮相。➀ SK Hynix has commenced production of its 321-layer NAND chip; ➁ The chip features the highest number of layers in the industry; ➂ The product was first introduced at Flash Summit 2023 in August.
11/21/2024, 07:37 AM UTC
YEST将为SK海力士提供用于HBM生产的eFurnaceYEST to supply eFurnace used in HBM production to SK Hynix
➀ YEST宣布将为SK海力士提供价值111.6亿韩元的eFurnace；➁ 该eFurnace用于净化晶圆并提高其电学特性；➂ 预计SK海力士将使用该设备进行HBM生产。➀ YEST announced that it will supply 11.16 billion won worth of eFurnace to SK Hynix; ➁ The eFurnace is used for purifying wafers and enhancing their electrical properties; ➂ SK Hynix is expected to use the equipment in HBM production.
11/20/2024, 08:04 AM UTC
ASRock Z890 Taichi OCF主板刷新DDR5内存世界纪录，达到12527MHzASRock's Z890 Taichi OCF motherboard sets new world record, DDR5-12527 MHz
➀ 拳皇AKM刷新了DDR5内存频率的世界纪录，达到12527MHz；➁ 该纪录使用英特尔Core Ultra 9 285K处理器、ASRock Z890 Taichi OCF主板和V-COLOR Manta XFinity DDR5内存实现；➂ ASRock的设计特点对打破纪录起到了关键作用。➀ Overclocker AKM sets a new DDR5 memory frequency world record of 12527MHz; ➁ The record is achieved with an Intel Core Ultra 9 285K Processor, ASRock Z890 Taichi OCF motherboard, and V-COLOR Manta XFinity DDR5 memory; ➂ ASRock's design features contribute to the record-breaking performance.
11/15/2024, 04:10 AM UTC
三星为Meta和微软开发定制HBM4解决方案，以对抗台积电和SK海力士Samsung working on 'custom HBM4' solutions for Meta and Microsoft, to fight TSMC and SK hynix
➀ 三星正在为Meta和微软开发定制化的HBM4内存解决方案；➁ 预计到2025年底开始量产；➂ 新的HBM4内存将提供2TB/s的带宽和高达48GB的容量。➀ Samsung is developing customized HBM4 memory solutions for Meta and Microsoft; ➁ Mass production is expected by the end of 2025; ➂ The new HBM4 memory will offer 2TB/sec bandwidth and up to 48GB capacities.
11/14/2024, 02:29 AM UTC
DDR5内存速度世界纪录被打破，AKM超频者实现DDR5-12264DDR5 memory speed world record was broken, DDR5-12264 achieved by overclocker AKM
➀ 超频者AKM打破DDR5内存速度世界纪录；➁ 使用英特尔酷睿超频版9 285K、V-COLOR XFinity内存和ASRock Z890泰极OCF主板实现DDR5-12264；➂ 新纪录超越之前的DDR5-12112记录 。➀ DDR5 memory speed world record broken by overclocker AKM; ➁ DDR5-12264 achieved with Intel Core Ultra 9 285K, V-COLOR XFinity memory, and ASRock Z890 Taichi OCF; ➂ New record surpasses previous DDR5-12112 record.
11/05/2024, 10:32 AM UTC
SK海力士将在2025年初提供HBM3E 16H样品SK Hynix to provide HBM3E 16H samples in early 2025
➀ SK海力 士计划在2025年初提供其第五代高带宽内存（HBM）HBM3E 16H的样品；➁ HBM3E 16H采用16片堆叠的DRAM芯片，并将继续使用大规模再流成型技术；➂ SK海力士首席执行官Kwak Noh-jung在SK集团主办的活动上宣布了这一消息。➀ SK Hynix is scheduled to provide samples of its Gen 5 HBM, HBM3E 16H, in early 2025; ➁ The HBM3E 16H features 16 stacked DRAM dies and will utilize mass reflow molding technology; ➂ SK Hynix CEO Kwak Noh-jung announced this at an event hosted by SK Group.
11/04/2024, 03:52 AM UTC
SK海力士董事长：英伟达CEO请求提前6个月供应HBM4芯片SK hynix boss says NVIDIA CEO asked him to bring forward supply of HBM4 chips by 6 months
➀ 英伟达CEO黄仁勋请求SK海力士提前六个月供应HBM4内存；➁ SK海力士原计划于2025年下半年准备好下一代HBM4内存；➂ 英伟达目前使用SK海力士的HBM3E内存为其AI芯片供电，并计划在其即将推出的Rubin R100 AI GPU中使用HBM4。➀ NVIDIA CEO Jensen Huang requested SK hynix to accelerate the supply of HBM4 memory by six months; ➁ SK hynix originally planned to have its next-gen HBM4 memory ready in the second half of 2025; ➂ NVIDIA currently uses SK hynix's HBM3E memory for its AI chips and plans to use HBM4 in its upcoming Rubin R100 AI GPU.
11/01/2024, 02:44 AM UTC
三星提升关键HBM供应，暗示与台积电合作[News] Samsung Advances Key HBM Supply, Hints at TSMC Partnership
➀ 三星电子在第三季度财报中宣布，尽管利润大幅下降，但盈利情况超出预期。➁ 公司强调其在高带 宽内存（HBM）供应方面的进步。➂ 三星暗示可能将与台积电进行合作，表明在半导体行业中进行战略布局的意图。➀ Samsung Electronics reported a better-than-expected profit in its third-quarter earnings, despite a significant decline in profits. ➁ The company highlighted its advancement in high-bandwidth memory (HBM) supply. ➂ Samsung hinted at a potential partnership with TSMC, indicating a strategic move in the semiconductor industry.
10/30/2024, 07:32 AM UTC
内存现货价格更新：DDR5 保持稳定；DDR4 价格短期内难以反弹[Insights] Memory Spot Price Update: DDR5 Remains Stable; DDR4 Prices Unlikely to Rebound Anytime Soon
➀ DDR5 价格保持稳定；➁ DDR4 价格短期内不太可能反弹；➂ 市场分析表明 DDR5 价格稳定，DDR4 价格恢复前景有限。➀ DDR5 prices remain stable; ➁ DDR4 prices are unlikely to rebound in the near future; ➂ Market analysis suggests stable DDR5 prices and limited prospects for DDR4 price recovery.
10/30/2024, 03:37 AM UTC
G.SKILL与ASUS打破DDR5频率世界纪录，实现惊人的DDR5-12112速度G.SKILL and ASUS break DDR5 frequency world record with incredible DDR5-12112 speed
➀ G.SKILL与ASUS ROG将DDR5频率世界纪录提升至12,112 MT/s；➁ 该纪录是通过使用G.SKILL Trident Z5 RGB内存和英特尔Core Ultra 9 285K CPU实现的；➂ 这项破纪录的性能展示了最新英特尔处理器和G.SKILL DDR5内存的能力。➀ G.SKILL and ASUS ROG set a new DDR5 frequency world record at 12,112 MT/s; ➁ The record was achieved using G.SKILL Trident Z5 RGB memory and Intel Core Ultra 9 285K CPU; ➂ The record-breaking performance showcases the capabilities of the latest Intel processors and G.SKILL DDR5 memory.
10/29/2024, 02:39 AM UTC
三星计划2026年实现400层垂直NAND，2030年目标1000层NAND[News] Samsung Reportedly Plans 400-layer Vertical NAND by 2026, Targeting 1,000-layer NAND by 2030
➀ 据报道，三星计划到2026年推出400层垂直NAND；➁ 该公司旨在2030年实现1000层NAND的目标；➂ 这是内存市场竞争的一部分，尤其是在HBM成为AI时代关键战场的情况下。➀ Samsung is reportedly planning to introduce 400-layer vertical NAND by 2026; ➁ The company aims to reach a 1,000-layer NAND target by 2030; ➂ This move is part of the competition in the memory market, especially with HBM becoming a crucial battlefield in the AI era.
10/28/2024, 06:35 AM UTC
三星新型突破性内存技术：融合RAM和SSD的Selector-Only MemorySamsung's new and potentially breakthrough memory technology blends RAM and SSDs
➀ 三星正在开发一种名为Selector-Only Memory (SOM)的新型内存，它结合了RAM和SSD的特性。➁ 研究人员利用先进的计算机建模将4000种潜在材料组合缩小到18个主要候选者。➂ 这些发现将在12月的国际电子器件会议上展示。➀ Samsung is developing Selector-Only Memory (SOM), a new type of memory that combines the properties of RAM and SSDs. ➁ Researchers used advanced computer modeling to narrow down 4,000 potential material combinations to 18 prime candidates. ➂ The findings will be presented at the International Electron Devices Meeting in December.
10/28/2024, 01:36 AM UTC
金士顿使用全新DDR5 CUDIMM内存打破12,108MT/s内存超频世界纪录Kingston breaks memory OC world record using new DDR5 CUDIMM at insane 12,108MT/s speeds
➀ 金士顿的FURY Renegade DDR5 CUDIMM内存以12,108MT/s的速度打破了内存超频世界纪录；➁ 该纪录是在英特尔Z890平台上使用液氮冷却实现的；➂ 金士顿的8400MT/s CUDIMM模块经过充分测试，并已通过顶级主板制造商的认证，适用于高性能应用。➀ Kingston sets a new memory overclocking world record with its FURY Renegade DDR5 CUDIMM at 12,108MT/s; ➁ The record was achieved on Intel's Z890 platform with liquid nitrogen cooling; ➂ Kingston's 8400MT/s CUDIMM modules are tested and qualified for high-performance applications.
10/24/2024, 05:00 PM UTC
RISC-V与开源功能验证挑战The RISC-V and Open-Source Functional Verification Challenge
➀ RISC-V与开源功能验证挑战探讨了RISC-V和ARM核心验证过程的差异。 ➁ 讨论了选择可靠IP供应商的重要性以及软件支持对验证的影响。 ➂ 强调了RISC-V配置文件在简化验证和实现软件兼容性方面的作用。➀ The RISC-V and open-source functional verification challenge highlights the differences in verification processes between RISC-V and ARM cores. ➁ The importance of selecting a reliable IP vendor and the impact of software support on verification is discussed. ➂ The role of RISC-V profiles in simplifying verification and enabling software compatibility is emphasized.
10/24/2024, 12:00 PM UTC
谷歌或采用台积电N3E工艺替代2nm制造Tensor G6[News] Google Reportedly Adopts TSMC’s N3P Process instead of 2nm for Tensor G6
➀ 据传闻，谷歌将采用台积电的N3E工艺制造Tensor G5；➁ 报告还明确指出，谷歌没有选择为Tensor G6使用2nm技术；➂ 这一举措可能影响AI和智能手机芯片市场的竞争。➀ Google is rumored to switch to TSMC's N3E process for Tensor G5; ➁ The report also clarifies that Google has chosen not to use 2nm technology for Tensor G6; ➂ The move could impact the competition in the AI and smartphone chip markets.
10/16/2024, 01:00 PM UTC
移动LLM不只是技术。实际应用案例才是关键Mobile LLMs Aren’t Just About Technology. Realistic Use Cases Matter
➀ 谷歌正在探索在移动设备上运行大型语言模型（LLM）的可行性；➁ 谷歌在移动设备上优化LLM的技术；➂ 移动设备上LLM实际应用案例的重要性➀ Arm is exploring the feasibility of running LLMs on mobile devices; ➁ Arm's optimization techniques for LLMs on mobile; ➂ The importance of practical use cases for LLMs in mobile devices
10/15/2024, 05:00 PM UTC
电子束探测：7nm以下集成电路安全分析的新守护者Electron Beam Probing: The New Sheriff in Town for Security Analyzing of Sub- 7nm ICs with Backside PDN
➀ 电子束探测（EBP）已成为分析7nm以下集成电路安全性的有效方法。 ➁ 它比光学探测具有更高的空间分辨率，适用于7nm以下的倒装芯片和先进的三维架构。 ➂ 研究重点在于EBP在故障分析和硬件保 证中的重要性。➀ Electron Beam Probing (EBP) has become a powerful method for security analyzing of sub-7nm ICs. ➁ It offers better spatial resolution than optical probing and is suitable for sub-7nm flip-chips and advanced 3D architectures. ➂ The research focuses on the importance of EBP in failure analysis and hardware assurance.
10/15/2024, 03:44 AM UTC
NVIDIA GeForce RTX 5070传闻：比RTX 4070 Ti SUPER在光栅化上快5%，在RT上略快NVIDIA GeForce RTX 5070 rumor: faster than RTX 4070 Ti SUPER in raster, slighty faster in RT
➀ 据传闻，NVIDIA GeForce RTX 5070 12GB在光栅化上比RTX 4070 Ti SUPER快5%；➁ 预计在RT上提供5-10%的性能提升；➂ RTX 5070 18GB版本预计将配备更快的GDDR7内存模块和50%更多的VRAM。➀ The NVIDIA GeForce RTX 5070 12GB is rumored to be 5% faster in rasterization than the RTX 4070 Ti SUPER; ➁ It is expected to offer 5-10% more performance in RT; ➂ The RTX 5070 18GB version is rumored to have faster GDDR7 memory modules and 50% more VRAM.
10/15/2024, 02:57 AM UTC
英特尔非K系列Arrow Lake Core Ultra CPU可能最高支持DDR5-7200Intel's non-K Arrow Lake Core Ultra CPUs could top out at DDR5-7200
➀ 英特尔Core Ultra 200S系列台式CPU即将发布；➁ 非K系列可能存在DDR5支持限制；➂ Arrow Lake非K系列CPU最高支持DDR5-7200。➀ Intel's Core Ultra 200S desktop CPUs are launching; ➁ Non-K variants may have DDR5 support limitations; ➂ Arrow Lake non-K CPUs will top out at DDR5-7200.
10/15/2024, 12:55 AM UTC
NVIDIA GeForce RTX 5070 据传将配备18GB GDDR7版本（真的吗？）NVIDIA GeForce RTX 5070 rumored with an 18GB GDDR7 version (huh?!)
➀ 据传，NVIDIA下一代GeForce RTX 5070将配备18GB的GDDR7内存；➁ 初始版本将提供12GB内存，打破VRAM的传统；➂ 18GB版本可能为RTX 5070 SUPER 18GB。➀ NVIDIA's next-generation GeForce RTX 5070 is rumored to launch with 18GB of GDDR7 memory; ➁ Initially, it will be available in a 12GB model, breaking the VRAM mold; ➂ The 18GB version could be the RTX 5070 SUPER 18GB.
10/04/2024, 01:25 AM UTC
NVIDIA下一代GeForce RTX 5090笔记本电脑GPU规格泄露：256位内存总线上的24GB GDDR7NVIDIA's next-gen GeForce RTX 5090 Laptop GPU specs leak: 24GB GDDR7 on a 256-bit memory bus
➀ 据传闻，NVIDIA下一代GeForce RTX 5090笔记本电脑GPU将配备24GB的超快GDDR7内存和256位内存总线；➁ 预计2025年第一季度发布；➂ 对整体产品线和潜在配置的猜测。➀ NVIDIA's next-gen GeForce RTX 5090 Laptop GPU rumored to have 24GB of ultra-fast GDDR7 memory on a 256-bit memory bus; ➁ Expected to launch in Q1 2025; ➂ Speculation on the overall lineup and potential configurations.
10/01/2024, 05:27 PM UTC
9月DRAM和NAND价格下跌超过10%DRAM and NAND prices drop by over 10% in September
➀ 9月份DRAM和NAND的合约价格下跌超过10%；➁ 下跌原因是PC和消费电子产品需求低迷；➂ DDR4 8Gb 1Gx8的价格下跌了17.07%，至1.7美元。➀ Contract prices of DRAM and NAND dropped by over 10% in September; ➁ The decline was due to low demand for PCs and consumer electronics; ➂ DDR4 8Gb 1Gx8 prices fell by 17.07% to US$1.7.
09/30/2024, 01:06 PM UTC
AMD新增DDR5-8000 EXPO支持，新X870主板及时到来AMD adds DDR5-8000 EXPO support, just in time for new X870 motherboards
➀ AMD确认支持一键启用AMD EXPO DDR5-8000内存套件；➁ 该支持适用于新的X870和X870E主板；➂ AMD更新 了其AGESA BIOS固件，以提升Ryzen 9000系列处理器的性能和延迟。➀ AMD confirms support for one-click AMD EXPO DDR5-8000 memory kits; ➁ The support is available for new X870 and X870E motherboards; ➂ AMD updates its AGESA BIOS firmware for Ryzen 9000 Series CPU performance and latency improvements.
09/28/2024, 08:04 AM UTC
KLEVV GENUINE G560 PCIe Gen5 SSD：被动散热，速度高达14,000 MB/sKLEVV GENUINE G560 PCIe Gen5 SSD is passively cooled and reaches up to 14,000 MB/s speed
➀ KLEVV推出GENUINE G560 PCIe Gen5x4 NVMe M.2 SSD，读写速度高达14,000 MB/s；➁ 该SSD采用被动散热设计，面向游戏玩家和内容创作者；➂ KLEVV还宣布了CRAS C715 PCIe Gen3 SSD，容量最高可达1TB。➀ KLEVV introduces the GENUINE G560 PCIe Gen5x4 NVMe M.2 SSD with speeds up to 14,000 MB/s; ➁ The SSD features passive cooling and is designed for gamers and content creators; ➂ KLEVV also announces the CRAS C715 PCIe Gen3 SSD with capacities up to 1TB.
09/26/2024, 11:22 AM UTC
三星电子开始量产12层HBM3E内存：每模块容量高达36GB，带宽9.6GbpsSK hynix starts mass production of 12-layer HBM3E memory: 36GB capacity per module @ 9.6Gbps
➀ 三星电子开始量产全球首款12层HBM3E内存，容量高达36GB，带宽9.6Gbps；➁ 新内存专为AI GPU设计，计划在未来12个月内供应给NVIDIA；➂ 三星电子通过推出这项新技术，旨在保持其在AI内存领域的领导地位。➀ SK hynix has begun mass production of the world's first 12-layer HBM3E memory with a capacity of up to 36GB and a bandwidth of 9.6Gbps; ➁ The new memory is designed for AI GPUs and is set to be supplied to NVIDIA within 12 months; ➂ SK hynix aims to maintain its leadership in AI memory with the introduction of this new technology.
09/23/2024, 05:50 PM UTC
内存制造商在Linux开发者领域展开新战场CXL Linux developers: a new battleground for memory makers
➀ 内存制造商正竞争争取服务器操作系统开发者的支持；➁ 三星与红帽合作；➂ SK Hynix似乎旨在赢得整个生态系统的支持。➀ Memory manufacturers are competing to win over server operating system developers; ➁ Samsung is collaborating with Red Hat; ➂ SK Hynix appears to be aiming to win over the entire ecosystem.
08/29/2024, 07:07 PM UTC
SK海力士率先开发1c DDR5 DRAM，领先三星SK Hynix develops 1c DDR5 DRAM ahead of Samsung
➀ SK海力士宣布开发出业界首款第六代10纳米(nm)级16Gb DDR5 DRAM。➁ 这一成就使SK海力士领先于其国内竞争对手三星，后者于五月开始生产第五代DRAM。➂ SK海力士与三星之间的竞争持续推动DRAM技术的进步。➀ SK Hynix has announced the development of a Gen 6 10-nanometer (nm) 16Gb DDR5 DRAM, marking the first in the industry. ➁ This development positions SK Hynix ahead of its domestic competitor, Samsung, which began manufacturing Gen 5 DRAM in May. ➂ The competition between SK Hynix and Samsung continues to drive advancements in DRAM technology.
08/23/2024, 07:34 AM UTC
Kioxia在FMS上展示2Tbit NAND闪存Kioxia Unveils 2Tbit NAND Flash at FMS
1. Kioxia在未来内存和存储（FMS）活动上展示了采用QLC技术的2Tbit NAND闪存，实现了迄今为止最高的容量。2. 该公司还讨论了其下一代3D NAND技术的开发路线图，重点是第9代性能的改进和第10代内存密度的增加。3. Kioxia在FMS的展览包括一个大型的展位，展示了各种模型和展示，突出了其3D NAND技术的进步和2Tbit NAND闪存的推出。1. Kioxia showcased a 2Tbit NAND flash memory with QLC technology at the Future Memory and Storage (FMS) event, achieving the highest capacity to date. 2. The company also discussed the development roadmap for its next-generation 3D NAND technologies, focusing on performance improvements for the 9th generation and increased memory density for the 10th generation. 3. Kioxia's exhibition at FMS included a large booth with various models and displays, highlighting the advancements in its 3D NAND technology and the introduction of the 2Tbit NAND flash memory.
08/20/2024, 04:58 AM UTC
SK海力士计划开发性能提升30倍的新型内存产品SK hynix plans to develop new memory product with 30x the performance of HBM memory chips
➀ SK海力士计划开发性能提升20至30倍的新型内存产品；➁ 公司专注于为大型科技公司提供定制HBM解决方案；➂ SK海力士正在研发第六代HBM，即HBM4，预计将于2025年下半年开始出货。➀ SK hynix plans to develop a new memory product with 20-30x the performance of current HBM; ➁ The company is focusing on custom HBM solutions for major tech companies; ➂ SK hynix is working on its 6th generation HBM, HBM4, expected to ship in the second half of 2025.
08/13/2024, 08:45 PM UTC
芝奇推出低延迟DDR5内存模块：CL30，6400 MT/sG.Skill Intros Low Latency DDR5 Memory Modules: CL30 at 6400 MT/s
➀ 芝奇推出了超低延迟的DDR5-6400内存模块，CL30时序，这是目前DDR5-6400内存条中最激进的时序。➁ 这些模块适用于AMD和英特尔系统，与JEDEC标准相比，延迟大幅降低。➂ 新内存套件将于2024年8月底开始发售，主要面向高端主板和适当冷却的CPU。➀ G.Skill has introduced ultra-low-latency DDR5-6400 memory modules with CL30 timings, the most aggressive yet for DDR5-6400 sticks. ➁ These modules are designed for both AMD and Intel systems, offering a significant reduction in latency compared to JEDEC standards. ➂ The new memory kits will be available starting late August 2024, targeting high-end motherboards and properly cooled CPUs.
07/16/2024, 03:27 AM UTC
NVIDIA、台积电、SK海力士组建‘三角联盟’，共同开发下一代AI GPU及HBM4内存NVIDIA, TSMC, SK hynix form 'triangular alliance' for next-gen AI GPUs and HBM4 memory
1、NVIDIA、台积电和SK海力士已组建‘三角联盟’，旨在引领下一代AI GPU和HBM4内存的开发。2、SK海力士总裁金周奂预计将在台湾半导体展上与台积电高管讨论下一代HBM合作计划。3、该联盟旨在通过2026年进入大规模生产的HBM4，主导AI GPU市场。1. NVIDIA, TSMC, and SK hynix have formed a 'triangular alliance' to lead the development of next-gen AI GPUs and HBM4 memory. 2. SK hynix president Kim Joo-sun is expected to discuss next-generation HBM collaboration plans with TSMC executives at SEMICON Taiwan. 3. The alliance aims to dominate the AI GPU market with HBM4 entering mass production in 2026.
07/04/2024, 04:06 PM UTC
Neosem向三星供应CXL 2.0内存检测设备Neosem supplies CXL 2.0 memory inspection kit to Samsung
1、Neosem成为首家供应CXL 2.0内存生产检测设备的公司。2、该设备用于确定CXL 2.0内存模块的可操作性。3、新设备 的客户是三星。1. Neosem has become the first company to supply inspection equipment for CXL 2.0 memory production. 2. The equipment is used to determine the operability of CXL 2.0 memory modules. 3. The customer for this new equipment is Samsung.
06/05/2024, 02:30 PM UTC
G.Skill演示了Ryzen 8500G系统上的DDR5-10600内存模 块G.Skill Demonstrates DDR5-10600 Memory Modules On Ryzen 8500G System
1、G.Skill展示了一个DDR5内存模块，具有10,600 MT/s的数据传输率，这比现在流行的内存模块要高很多。 2、该模块使用AMD的Ryzen 5 8500G处理器和ASUS ROG Crosshair X670E Gene主板， cooling system是自定义的液冷系统。 3、G.Skill计划将这个模块用于未来市场，但还需要与各种CPU进行测试以确保稳定性。
05/19/2024, 08:07 PM UTC
SK海力士的客户存款再次上涨，来自HBM的订单SK Hynix’s customer deposit jumps again from HBM
1、SK海力士在2024年第一季度的客户存款再次上涨，达到56.1亿韩元。 2、这是由于Nvidia给予的先期支付，确保稳定的高带宽存储器(HBM)供应。 3、SK海力士已经售出2024年的HBM生产能力，2025年的生产能力也基本售出。
05/16/2024, 12:00 PM UTC
TSMC Readies Next-Gen HBM4 Base Dies, Built on 12nm and 5nm Nodes
1、TSMC 将生产基于 12nm 和 5nm 节点的下一代 HBM4 基底_die。 2、该公司正在与 Micron、Samsung 和 SK Hynix 等 MEMORY 厂商合作，使用高级逻辑 process 制作 HBM4 基底_die。 3、HBM4 基底_die 将采用 N12FFC+ 和 N5 两种制程技术，提供更高的性能和更低的功耗
