➀ Imec and Diraq demonstrated silicon quantum dot qubits with error rates below the threshold for quantum error correction, achieving over 99% fidelity in one- and two-qubit gate operations;

➁ The qubits were fabricated using imec's industrial 300mm spin qubit platform and isotopically enriched silicon, ensuring low electrical/magnetic noise and high reproducibility;

➂ This collaboration validates a scalable, cost-effective semiconductor industry approach to mass-producing millions of qubits, a critical milestone for practical quantum computing.

➀ In 2007, IMEC's Rudy Lauwereins stated that EUV was not mature enough for 32nm and likely 22nm semiconductor nodes, favoring immersion and double patterning techniques instead;

➁ Double patterning faced challenges like doubled mask costs and wafer throughput time, while device leakage issues at 22nm geometries highlighted scaling limits;

➂ IMEC proposed 3D-SIP (3D system-in-package) as a solution to sustain Moore’s Law momentum amid lithography and scaling barriers.

➀ The PUNCH project, led by Fraunhofer IZM and IMEC, develops photonic integrated circuits (PICs) to enable ultra-fast, low-latency data transmission, targeting applications in data centers and traffic networks;

➀ PICs combine optical signaling with electronic chips using Fan-Out Wafer Level Packaging, boosting network speeds from 200 Gb/s to 1.6 Tb/s while reducing energy consumption and costs;

➂ Supported by EU Horizon Europe funding, the project involves collaborations with NVIDIA, Ericsson, and the University of Cambridge and aims to finalize a scalable solution by 2026.

➀ The PUNCH project, coordinated by IMEC and led by Fraunhofer IZM, aims to develop optical switches to accelerate data networks, achieving 8x faster transmission than conventional methods for applications in data centers and traffic networks;

➁ Researchers integrate photonic integrated circuits (PICs) with electronic chips using heterogenous Fan-Out Wafer Level Packaging (FOWLP), boosting network speeds to 1.6 Tb/s and improving scalability for mass production;

➂ The technology promises reduced latency, lower energy consumption, and guaranteed service quality, with potential use cases in automotive communication and video streaming.

➀ Imec developed a GaN MOSHEMT on silicon with record 27.8dBm output power and 66% efficiency at 13GHz/5V, optimized for 6G FR3 band (7-24GHz);

➁ Achieved ultra-low 0.024Ω·mm contact resistance using regrown n⁺(In)GaN, potentially boosting output power density by 70%;

➂ Addresses limitations of current GaAs and SiC-based solutions, enabling scalable silicon platforms for future 6G mobile devices.

➀ Imec fabricated Ruthenium (Ru) interconnects at a 16nm pitch using a semi-damascene process, achieving record-low resistance of 656Ω/µm;

➁ The integration flow combined EUV-based SADP and optimized Ru etching to enhance cost-effectiveness and yield, with 90%+ yields at 18-22nm pitches;

➂ Imec is advancing pillar-based self-aligned vias and epitaxial Ru films to further reduce resistance and expand multi-layer interconnect scalability.

➀ Imec and MIT collaborate on nanoelectronics-based solutions for minimally invasive diagnostic devices to advance personalized medicine;

➁ The partnership combines MIT's expertise in healthcare microsystems and imec's semiconductor technology leadership, aiming to develop clinical and home-use monitoring devices;

➂ AI-integrated data from these devices will generate digital biological profiles to empower disease diagnosis, therapy, and prevention.

➀ Siemens Digital acquires Excellicon to strengthen EDA automation with timing and verification tools;

➁ IMEC proposes reconfigurable AI ICs for future applications;

➂ Analog Devices launches the ADHV4710 power op-amp with ±52V/100mA output and digital interface capabilities, while Zeno Power secures $50M for nuclear battery development in extreme environments.

➀ Imec has developed an ingestible sensor (2.1cm long, 0.75cm diameter) to measure redox balance, pH, and temperature in the gastrointestinal tract, addressing challenges in traditional diagnostic methods like endoscopy;

➁ The sensor, demonstrated live at ITF World, offers real-time monitoring without invasive procedures and has been tested in healthy volunteers with Wageningen University & Research;

➂ Future trials with Radboud University Medical Center will focus on patients with cancer or chronic inflammation, aiming to advance gastrointestinal disease diagnosis and management.

➀ Imec and TNO have launched the Holst Centre Photonics Lab in the Netherlands, partially funded by PhotonDelta, to accelerate photonics R&D.

➁ The lab combines imec's expertise in tape-out validation, on-chip lasers, and system testing with TNO's strengths in free-space optics and photonic integration, fostering industry-academia collaboration.

➂ Focused on applications like LiDAR, medical diagnostics, and quantum technologies, the initiative aims to strengthen the Netherlands' leadership in integrated photonics across automotive, healthcare, and data communication sectors.

➀ Imec has developed a proof-of-concept photonics-enabled CDM FMCW radar system that ensures coherent chirps to remote radar units.

➁ This technology could revolutionize next-generation driver assistance solutions and other high-precision sensing applications.

➂ The system utilizes a phase encoder with code-division multiplexing and optical signal distribution for low-loss transmission.

➀ imec, a leading nanoelectronics and digital technologies research center, is establishing an Advanced Chip Design Accelerator (ACDA) in Baden-Württemberg, Germany.

➁ The €40 million center is funded over the next five years.

➂ The focus is on advancing automotive chiplet technology, enhancing Germany and Europe's position in this field.

➀ Imec and Zeiss have signed a Strategic Partnership Agreement to advance semiconductor technology.

➁ The partnership focuses on High-NA-EUV lithography and other key semiconductor manufacturing technologies.

➂ Zeiss will support imec with research projects and lithography optics, enhancing imec's pilot line capabilities.

➀ ASML and imec have signed a new strategic partnership agreement, focusing on research and sustainability.

➁ The agreement aims to deliver valuable solutions in two areas: advancing the semiconductor industry and developing sustainable innovation initiatives.

➂ The collaboration includes ASML's full product portfolio, focusing on high-end nodes and advanced technologies.

➀ Intel has begun production with the first two of ASML's advanced lithography machines in its factory, showing early data indicating increased reliability over earlier models.

➁ Intel, which became the first chip manufacturer to receive these machines last year, plans to use them to develop 18A manufacturing technology for mass production later this year.

➂ Imec has demonstrated the first electrical yield results from 20nm spacing metal lines patterned using High NA EUV single patterning technology, showing good electrical yield and fewer random defects.

➀ SRAM has been used in high-performance computing architectures as embedded cache for decades, but its bit density expansion has slowed down and is affected by standby power issues.

➁ Spin Orbit Torque (SOT) MRAM offers advantages like low standby power, GHz-level switching speed, negligible leakage, almost infinite endurance, high reliability, and scalability, making it a promising alternative to SRAM.

➂ SOT-MRAM uses magnetic tunnel junctions (MTJ) as its basic building block, where the magnetic orientation can be vertical or in-plane, affecting the read and write operations.

➃ Recent advancements in SOT-MRAM technology, including improvements by imec, have demonstrated high switching speeds and durability, addressing key challenges in cache applications.

➄ Imec has developed innovative solutions for field-free switching, low dynamic power consumption, and scaling SOT-MRAM devices to the limit, making it a milestone for high-density SRAM applications.

➅ Further optimization of performance and reliability parameters, such as retention rate and write error rate, is being explored to bring SOT-MRAM closer to real-world specifications.

➆ Imec has also presented a novel composite free layer for MTJ, which improves the reliability of SOT-MRAM devices and reduces sensitivity to external magnetic disturbances.

➀ SRAM has been used in high-performance computing architectures as embedded cache for decades, but its bit density expansion has slowed down and is affected by standby power issues.

➁ Spin Orbit Torque (SOT) MRAM offers advantages like low standby power, GHz-level switching speed, negligible leakage, almost infinite endurance, high reliability, and scalability, making it a promising alternative to SRAM.

➂ SOT-MRAM uses magnetic tunnel junctions (MTJ) as its basic building block, where the magnetic orientation can be vertical or in-plane, affecting the read and write operations.

➃ Recent advancements in SOT-MRAM technology, including improvements by imec, have demonstrated high switching speeds and durability, addressing key challenges in cache applications.

➄ Imec has developed innovative solutions for field-free switching, low dynamic power consumption, and scaling SOT-MRAM devices to the limit, making it a milestone for high-density SRAM applications.

➅ Further optimization of performance and reliability parameters, such as retention rate and write error rate, is being explored to bring SOT-MRAM closer to real-world specifications.

➆ Imec has also presented a novel composite free layer for MTJ, which improves the reliability of SOT-MRAM devices and reduces sensitivity to external magnetic disturbances.

➀ Intel, TSMC, and Samsung are advancing their processes to 1.8nm (18A) and 1.6nm (16A) with full-gate transistors (Intel calls them RibbonFET) and further to the 14A node.

➁ Imec is researching the next-generation complementary field-effect transistor (CFET) stacked transistors on the process roadmap.

➂ Imec will showcase its CFET standard cell at the 2024 IEEE International Electronic Devices Meeting (IEDM) this week, which includes two rows of CFET with a shared signal wiring wall, reducing the area of logic and SRAM units significantly.

➃ Intel has made breakthroughs in 2D transistor technology using beyond-silicon materials, chip interconnects, and packaging technologies.

➄ Intel's RibbonFET is the company's first new transistor design since the introduction of FinFET 13 years ago and is the company's first full-gate (GAA) transistor.