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electronicsweekly

04/14/2025, 10:32 AM UTC

英飞凌推出100V氮化镓晶体管，集成肖特基二极管实现硬开关100V GaN transistor will integrate Schottky diode for hard switching

➀ 英飞凌计划推出一款100V氮化镓晶体管，并集成肖特基二极管，用于硬开关电源拓扑；

➁ 由于氮化镓拓扑中缺少体二极管，可能导致由于体二极管电压较大而造成的功率损耗增加；

➂ 新设备通过在氮化镓晶体管反并联一个肖特基二极管，以减少死时间并保持效率。

➀ Infineon is planning a 100V GaN transistor with an integrated Schottky diode for hard-switched power topologies;

➁ The lack of body diode in GaN-based topologies can lead to higher power losses due to the larger effective body diode voltage;

➂ The new device is designed to reduce dead-time and maintain efficiency by connecting a Schottky diode in anti-parallel with the GaN transistor.

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