04/29/2025, 08:58 AM UTC
集成续流二极管的双向1200 V GaN开关Bidirectional 1200 V GaN switch with integrated free-wheeling diodes
➀ 弗劳恩霍夫IAF利用氮化镓绝缘体技术开发了集成续流二极管的1200 V双向GaN开关，可提升电动汽车充电器和可再生能源系统的效率；
➁ 该研究所还通过单栅极GaN高电子迁移率晶体管（HEMT）实现了低压3电平拓扑的双向开关控制，简化了多电平变流器设计；
➂ 上述成果及48 V至1200 V电压等级的GaN功率电子技术进展将在2025年PCIM Europe展会上展示，凸显欧洲在能源转型关键技术领域的创新实力。
➀ Fraunhofer IAF developed a monolithic bidirectional 1200 V GaN switch with integrated free-wheeling diodes using GaN-on-insulator technology, enhancing efficiency in EV chargers and renewable energy systems;
➁ The institute also demonstrated a single-gate GaN HEMT as a bidirectional switch for low-voltage 3-level converters, simplifying control in multi-level topologies;
➂ These innovations, along with advancements in GaN power electronics across 48 V to 1200 V classes, will be showcased at PCIM Europe 2025, highlighting Europe's progress in energy transition technologies.
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