➀ JEDEC is finalizing the JESD328 standard (SOCAMM2) for low-profile LPDRAM modules tailored for AI data centers, targeting high-bandwidth and energy efficiency;

➁ The LPDDR5/5X-based modules support up to 9.6 Gb/s per pin, reduce cooling/energy demands, and integrate an SPD device for enterprise deployment;

➂ The compact design aims to meet the scalability and performance requirements of AI training and inference servers in high-density data centers.

➀ ADATA董事长陈立白表示，AI数据中心对DRAM、SSD和硬盘的需求已导致全行业供应短缺，上游库存仅剩2-3周；

➁ 云服务商大量采购存储组件，挤压消费级市场，威刚已采取限量销售策略，优先供应长期客户；

➂ 全球存储价格持续上涨，DRAM和SSD企业级收入分别增长17.1%和12.7%，消费电子产品或面临涨价压力。

➀ The electronic components market faces widespread uncertainty, with DRAM supply tightened due to AI-driven HBM demand and Micron's temporary price suspension spooking buyers;

➁ Texas Instruments (TI) raised prices by 15-70% on select products and discontinued certain lines, while Vicor announced a 10% price hike;

➂ Procurement teams are advised to monitor tariffs, diversify suppliers, and avoid single-source components to mitigate risks.

➀ A 1978 article by Mike Evans of National Semiconductor highlighted the critical role of efficient memory usage in microprocessor systems and the lack of universal controllers for MADRAMs (Multiplexed Address DRAMs) in multi-chip configurations;

➁ MADRAMs, like the MM5290, utilized separate row/column strobes for page-mode operation but required specialized controllers that limited timing and power-saving optimizations;

➂ The article proposed a general-purpose MADRAM controller to bridge 8/16-bit microprocessors with various memory setups, focusing on address multiplexing and selective RAS activation for enhanced efficiency.

➀ DDR5技术持续升级，预计2025年将突破10,000 MT/s，并支持32 Gb高容量芯片；

➁ 三星、SK海力士、美光竞逐1γ/1c制程技术，DDR6延迟至2029年后发布；

➂ MRDIMM和CUDIMM新技术为数据中心和消费级平台提供更高带宽与稳定性。

➀ Biwin introduces the DW100 DDR5 192 GB Memory Kit (4x48GB) optimized for AI, LLMs, and high-performance computing with DDR5-6000 CL28-36-36-102 specifications at 1.4V;

➁ Designed for low-latency, stable overclocking, and heavy data workloads, it supports AMD EXPO and one-click tuning on X870/B850 motherboards from ASUS, MSI, and Gigabyte;

➂ Targets applications like AI model training, large-scale simulations, and high-bandwidth memory tasks.

➀ SK Hynix becomes the first memory manufacturer to install ASML's High-NA EUV lithography system (EXE:5200B) at its M16 fab, aiming to streamline DRAM production for AI and HPC markets;

➁ The 0.55 NA system enables 1.7x smaller circuit patterns and 2.9x higher density, reducing multi-patterning steps while targeting next-gen HBM development;

➂ Accelerating equipment deployment by six months gives SK Hynix a competitive edge over Samsung, positioning it to lead in AI memory solutions with earlier mass production capabilities.

➀ Q2 2025 semiconductor equipment billings reached $33.07 billion, up 24% YoY and 3% QoQ, driven by demand for leading-edge logic, HBM-related DRAM, and shipments to Asia;

➁ SEMI highlights strong H1 2025 revenue exceeding $65 billion, building on 2024's record $117 billion billings;

➂ Investments focus on advanced logic, memory for AI, and regional supply chain resilience, per SEMI CEO Ajit Manocha.

➀ Researchers from imec and Ghent University achieved a 120-layer stack of silicon and silicon-germanium (Si/Ge) using advanced epitaxial deposition, overcoming lattice mismatch challenges through carbon doping and temperature control.

➁ This breakthrough enables 3D DRAM development, allowing vertical stacking for higher memory density without increasing chip size, potentially revolutionizing storage capacity.

➂ The technology also benefits 3D transistors, quantum computing, and aligns with Samsung's 3D DRAM roadmap and next-gen architectures like GAAFET and CFET.

➀ InnoDisk showcased DDR5-12800 MRDIMM samples at FMS 2025, targeting future server platforms;

➁ The MRDIMMs offer capacities up to 128GB and are designed to address memory bandwidth bottlenecks in high-core-count servers;

➂ Intel's current Xeon 6 processors support MRDIMMs, with next-gen platforms expected to double throughput via DDR5-12800 and 16-channel configurations.

➀ Micron reports a surge in memory market performance, with HBM revenue growing nearly 50% sequentially and DRAM revenue hitting a record in Q3;

➁ The company projects Q4 revenues of $11.2 billion, driven by improved pricing and strong demand, especially in data center and client SSDs;

➂ Gross margins rise to 44.5% as Micron solidifies its position as a top supplier in key memory segments, while leadership debates whether growth reflects inventory restocking or a sustained market recovery.

➀ The XPG Lancer CUDIMM RGB DDR5-9200 C42 offers top-tier speed (up to 9200MT/s) and a sleek recycled aluminum design with RGB lighting, though compatibility is limited to Intel systems.

➁ AMD Zen 5 processors failed to support its 9200MT/s speed, while Intel's Core Ultra 9 285K struggled with Gear 2 mode, leading to performance compromises.

➂ Priced at $279.99 for 48GB, it's competitively positioned against DDR5-8400 kits but demands premium pricing for enthusiasts seeking cutting-edge performance.

➀ CXMT delays mass production of DDR5 memory to late 2025 due to quality and yield challenges, with rates around 50% and resolved thermal issues through costly redesigns;

➁ The company's DDR5 quality now matches Nanya Technology, but global competitiveness is hampered by outdated 16nm process and U.S. export restrictions on equipment maintenance;

➂ China's state-backed expansion targets 280,000 wafers monthly by 2025, though reliance on foreign tools (80% imported) poses long-term risks amid geopolitical tensions.

➀ ASML reported Q2 2025 net sales of €7.7B, a gross margin of 53.7%, and net income of €2.3B, exceeding guidance expectations;

➁ The company highlighted progress in EUV lithography, including the first shipment of the TWINSCAN EXE:5200B system and strong DRAM-driven litho intensity;

➂ While forecasting a 15% sales increase for 2025, ASML expressed uncertainty about 2026 due to macroeconomic and geopolitical challenges, despite strong AI customer demand.

➀ China's semiconductor industry faces multiple 'zombie fab' failures due to mismanagement and US sanctions;

➁ High-profile projects like HSMC's $19B Wuhan fab and Fujian Jinhua's DRAM plant collapsed amid technical gaps and funding crises;

➂ Structural issues including overambitious goals and lack of expertise continue to hinder China's chipmaking ambitions.

➀ Micron announces $200B U.S. investment plan spanning 20+ years, including $150B for six new DRAM fabs (2 in Idaho, 4 in New York) and $50B for domestic R&D;

➁ The first Idaho fab (ID1) will start DRAM production in late 2027, with HBM packaging capabilities added to Virginia facility post-domestic wafer scaling;

➂ While expanding U.S. capacity, Micron’s global DRAM/NAND production will remain predominantly overseas, reflecting strategic balancing of geopolitical demands and economic realities.

➀ Jitter is identified as a critical yet underappreciated metric for evaluating PDN quality, particularly impacting DDR interfaces by limiting timing margins;

➁ A simulation methodology using 3D EM solvers and VHDL-AMS models is proposed to quantify PDN-induced jitter, enabling comparisons of decoupling capacitor configurations;

➂ Results reveal that flatter PDN impedance profiles outperform designs with lower impedance in reducing jitter, challenging traditional PDN optimization strategies.

➀ Researchers at Science Tokyo developed BBCube - a 3D chip stacking architecture enabling direct DRAM-xPU integration with 10μm chip gaps and 10ms/chip bonding;

➁ Innovations include inkjet-based COW bonding, heat-resistant DPAS300 adhesive, and embedded capacitors for power delivery;

➂ Reduces data transmission energy by 80-95% compared to traditional 2D systems, promising breakthroughs for AI accelerators and edge devices.

➀ Micron Technology introduces the world's first LPDDR5X memory using 1γ node technology, achieving 10.7 Gbps speed and 20% power savings;

➁ The ultra-thin 0.61mm package enables slimmer designs for smartphones and foldable devices, supporting on-device AI tasks like real-time translation and image generation;

➂ Performance tests show 30-50% faster AI responses compared to previous generations, with potential applications in AI PCs and automotive systems.

➀ The global memory market reached $170 billion in 2024, with DRAM sales at $97 billion and NAND sales at $68 billion, while HBM is projected to grow rapidly, doubling to $34 billion in 2025;

➁ Chinese companies CXMT and YMTC intensified competition by launching cost-effective DDR3/DDR4 and advanced 3D NAND chips, prompting global players to accelerate DDR5 and HBM development;

➂ SK Hynix leads the HBM market (54% share) through partnerships like NVIDIA, while Samsung and Micron ramp up HBM3E production to secure AI-driven growth.