04/29/2025, 08:52 AM UTC
集成续流二极管的双向1200V氮化镓开关Bidirectional 1200V GaN Switch with Integrated Freewheeling Diodes
➀ 德国弗劳恩霍夫IAF研究所利用氮化镓绝缘衬底技术开发出集成两个续流二极管的1200V双向氮化镓开关，可提升电动汽车充电系统、可再生能源存储及车辆动力总成的能效；
➁ 研究团队另设计了一种基于单栅极HEMT的低压双向开关，相比双栅方案显著简化了晶体管控制，适用于多电平拓扑结构；
➂ 该成果在2025年PCIM Europe展会上发布，展示了从48V到1200V全电压段的氮化镓功率元件技术路线，涵盖横向/纵向器件设计及碳化硅/蓝宝石基板创新，并计划向1700V级器件拓展。
➀ Fraunhofer IAF developed a monolithic bidirectional 1200V GaN switch using GaN-on-Insulator technology, integrating two freewheeling diodes to enhance efficiency in EV chargers, renewable energy systems, and automotive powertrains;
➁ The team also demonstrated a single-gate GaN HEMT as a bidirectional switch for low-voltage multi-level converters, simplifying transistor control compared to dual-gate solutions;
➂ These innovations, presented at PCIM Europe 2025, highlight advancements in GaN power electronics across 48V to 1200V applications, including plans for 1700V-class devices and modular integration.
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