05/08/2025, 09:54 AM UTC
PCIM展会：40V 0.8mΩ GaN电源晶体管用于同步整流PCIM: 40V 0.8mΩ GaN power transistor for synchronous rectification
➀ EPC推出40V氮化镓（GaN）功率晶体管EPC2366，专为48V转12V LLC直流变换器设计，旨在取代传统硅基MOSFET在次级侧同步整流中的应用；
➁ 该器件具备0.8mΩ超低导通电阻，支持68A持续电流，采用可双面散热（顶部0.6°C/W、底部1.8°C/W）的3.3x2.6mm PQFN封装，适配5V栅极驱动；
➂ 除同步整流外，还可用于24V电池供电电机驱动，EPC已提供评估板，但目前样品需申请通过后获取。
➀ EPC launched a 40V GaN power transistor (EPC2366) targeting 48V-12V LLC DC-DC converters, aiming to replace silicon MOSFETs in secondary-side synchronous rectification;
➁ The device features ultra-low Rds(on) of 0.8mΩ, 68A continuous current, and thermal management with both top (0.6°C/W) and bottom (1.8°C/W) cooling capabilities;
➂ Supported by evaluation boards like EPC90167, it also targets 24V battery-powered motor drives, though samples require qualification for access.
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