06/16/2025, 05:18 AM UTC
imec推出面向6G FR3频段的晶体管Imec transistor for 6G FR3 band
➀ imec开发出硅基GaN MOSHEMT晶体管，在13GHz/5V下实现27.8dBm输出功率和66%效率，专为6G FR3频段（7-24GHz）优化；
➁ 通过再生n⁺(In)GaN层实现0.024Ω·mm超低接触电阻，预计可使输出功率密度提升70%；
➂ 突破现有GaAs和碳化硅方案局限，为未来6G移动设备提供可扩展的硅基平台解决方案。
➀ Imec developed a GaN MOSHEMT on silicon with record 27.8dBm output power and 66% efficiency at 13GHz/5V, optimized for 6G FR3 band (7-24GHz);
➁ Achieved ultra-low 0.024Ω·mm contact resistance using regrown n⁺(In)GaN, potentially boosting output power density by 70%;
➂ Addresses limitations of current GaAs and SiC-based solutions, enabling scalable silicon platforms for future 6G mobile devices.
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