12/08/2024, 03:43 AM UTC
0.7nm时代即将来临：imec和Intel分享路线图0.7nm Era Approaching: Imec and Intel Share Roadmap
➀ 英特尔、台积电和三星正在将工艺推进至1.8nm（18A）和1.6nm（16A），采用全栅极晶体管（英特尔称之为RibbonFET），并进一步推进至14A节点。
➁ imec正在研究工艺路线图上下一代互补场效应晶体管（CFET）堆叠晶体管。
➂ imec将在2024年IEEE国际电子设备会议（IEDM）上展示其CFET标准单元，包含两行CFET，中间有一个共享信号布线墙，显著减少了逻辑和SRAM单元面积。
➃ 英特尔在2D晶体管技术方面取得了突破，使用了超硅材料、芯片互连和封装技术。
➄ 英特尔的RibbonFET是自FinFET问世13年以来英特尔的首款新型晶体管设计，是公司首款全栅（GAA）晶体管。
➀ Intel, TSMC, and Samsung are advancing their processes to 1.8nm (18A) and 1.6nm (16A) with full-gate transistors (Intel calls them RibbonFET) and further to the 14A node.
➁ Imec is researching the next-generation complementary field-effect transistor (CFET) stacked transistors on the process roadmap.
➂ Imec will showcase its CFET standard cell at the 2024 IEEE International Electronic Devices Meeting (IEDM) this week, which includes two rows of CFET with a shared signal wiring wall, reducing the area of logic and SRAM units significantly.
➃ Intel has made breakthroughs in 2D transistor technology using beyond-silicon materials, chip interconnects, and packaging technologies.
➄ Intel's RibbonFET is the company's first new transistor design since the introduction of FinFET 13 years ago and is the company's first full-gate (GAA) transistor.
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