12/21/2024, 03:02 AM UTC
替代SRAM，新选择！Alternative to SRAM: The New Choice!
➀ SRAM几十年来一直被用作高性能计算架构中的嵌入式缓存，但其位密度扩展速度已经放缓，并且受到待机功率问题的困扰。
➁ 自旋轨道扭矩（SOT）MRAM具有低待机功耗、GHz级切换速度、可忽略不计的泄漏、几乎无限的耐用性、高可靠性和可扩展性等优势，使其成为SRAM的有希望的替代品。
➂ SOT-MRAM使用磁性隧道结（MTJ）作为其基本构建块，其中磁化方向可以是垂直或平面，这会影响读写操作。
➃ 最近，SOT-MRAM技术的进步，包括imec的改进，已经证明了高速切换和耐用性，解决了缓存应用中的关键挑战。
➄ Imec已经开发了无场切换、低动态功耗和将SOT-MRAM设备扩展到极限的创新解决方案，这对于高密度SRAM应用是一个里程碑。
➅ 正在探索进一步优化性能和可靠性参数，如保留率和写入错误率，以使SOT-MRAM更接近实际规格。
➆ Imec还展示了一种用于MTJ的创新复合自由层，这提高了SOT-MRAM设备的可靠性，并降低了对外部磁扰动的敏感性。
➀ SRAM has been used in high-performance computing architectures as embedded cache for decades, but its bit density expansion has slowed down and is affected by standby power issues.
➁ Spin Orbit Torque (SOT) MRAM offers advantages like low standby power, GHz-level switching speed, negligible leakage, almost infinite endurance, high reliability, and scalability, making it a promising alternative to SRAM.
➂ SOT-MRAM uses magnetic tunnel junctions (MTJ) as its basic building block, where the magnetic orientation can be vertical or in-plane, affecting the read and write operations.
➃ Recent advancements in SOT-MRAM technology, including improvements by imec, have demonstrated high switching speeds and durability, addressing key challenges in cache applications.
➄ Imec has developed innovative solutions for field-free switching, low dynamic power consumption, and scaling SOT-MRAM devices to the limit, making it a milestone for high-density SRAM applications.
➅ Further optimization of performance and reliability parameters, such as retention rate and write error rate, is being explored to bring SOT-MRAM closer to real-world specifications.
➆ Imec has also presented a novel composite free layer for MTJ, which improves the reliability of SOT-MRAM devices and reduces sensitivity to external magnetic disturbances.
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本文由大语言模型（LLM）生成，旨在为读者提供半导体新闻内容的知识扩展（Beta）。
12/21/2024, 03:01 AM UTC
替代SRAM，新选择！Alternative to SRAM: The New Choice!
➀ SRAM几十年来一直 被用作高性能计算架构中的嵌入式缓存，但其位密度扩展速度已经放缓，并且受到待机功率问题的困扰。
➁ 自旋轨道扭矩（SOT）MRAM具有低待机功耗、GHz级切换速度、可忽略不计的泄漏、几乎无限的耐用性、高可靠性和可扩展性等优势，使其成为SRAM的有希望的替代品。
➂ SOT-MRAM使用磁性隧道结（MTJ）作为其基本构建块，其中磁化方向可以是垂直或平面，这会影响读写操作。
➃ 最近，SOT-MRAM技术的进步，包括imec的改进，已经证明了高速切换和耐用性，解决了缓存应用中的关键挑战。
➄ Imec已经开发了无场切换、低动态功耗和将SOT-MRAM设备扩展到极限的创新解决方案，这对于高密度SRAM应用是一个里程碑。
➅ 正在探索进一步优化性能和可靠性参数，如保留率和写入错误率，以使SOT-MRAM更接近实际规格。
➆ Imec还展示了一种用于MTJ的创新复合自由层，这提高了SOT-MRAM设备的可靠性，并降低了对外部磁扰动的敏感性。
➀ SRAM has been used in high-performance computing architectures as embedded cache for decades, but its bit density expansion has slowed down and is affected by standby power issues.
➁ Spin Orbit Torque (SOT) MRAM offers advantages like low standby power, GHz-level switching speed, negligible leakage, almost infinite endurance, high reliability, and scalability, making it a promising alternative to SRAM.
➂ SOT-MRAM uses magnetic tunnel junctions (MTJ) as its basic building block, where the magnetic orientation can be vertical or in-plane, affecting the read and write operations.
➃ Recent advancements in SOT-MRAM technology, including improvements by imec, have demonstrated high switching speeds and durability, addressing key challenges in cache applications.
➄ Imec has developed innovative solutions for field-free switching, low dynamic power consumption, and scaling SOT-MRAM devices to the limit, making it a milestone for high-density SRAM applications.
➅ Further optimization of performance and reliability parameters, such as retention rate and write error rate, is being explored to bring SOT-MRAM closer to real-world specifications.
➆ Imec has also presented a novel composite free layer for MTJ, which improves the reliability of SOT-MRAM devices and reduces sensitivity to external magnetic disturbances.
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本文由大语言模型（LLM）生成，旨在为读者提供半导体新闻内容的知识扩展（Beta）。
