12/13/2024, 06:26 AM UTC
imec提出基于IGZO通道的3D CCD，用于CXL缓冲存储器Imec proposes 3D CCD with IGZO channel for CXL buffer memory
➀ imec提出一种基于IGZO通道的3D集成CCD，用于CXL缓冲存储器；➁ 该存储器在平面概念结构上运行，存储容量为142位；➂ imec预计3D CCD内存密度将超越DRAM限制，到2030年，其比特密度可能比2D DRAM高五倍。➀ Imec proposes a 3D integrated CCD with IGZO channel for CXL buffer memory; ➁ The memory operates on a planar proof-of-concept structure with a storage capacity of 142 bits; ➂ Imec expects the 3D CCD memory density to scale beyond DRAM limits, with potential for five times more bit density than 2D DRAM by 2030.---
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