06/04/2025, 05:17 AM UTC
imec采用16纳米间距低电阻钌互连线技术Imec fabs Ru lines at 16nm pitch with low resistance
➀ 比利时微电子中心（imec）采用半镶嵌工艺制造了16纳米间距的钌（Ru）互连线，实现了656Ω/µm的创纪录低电阻；
➁ 该工艺结合极紫外（EUV）自对准双图案化技术（SADP）和改进的钌刻蚀流程，在18-22纳米间距范围实现90%以上的晶圆良率；
➂ imec正在研发基于柱状结构的全自对准通孔（FSAV）和外延生长钌薄膜技术，以进一步降低电阻并扩展至多金属层互连方案。
➀ Imec fabricated Ruthenium (Ru) interconnects at a 16nm pitch using a semi-damascene process, achieving record-low resistance of 656Ω/µm;
➁ The integration flow combined EUV-based SADP and optimized Ru etching to enhance cost-effectiveness and yield, with 90%+ yields at 18-22nm pitches;
➂ Imec is advancing pillar-based self-aligned vias and epitaxial Ru films to further reduce resistance and expand multi-layer interconnect scalability.
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