➀ Infineon and Rohm signed an MoU to collaborate on SiC power device packages, enabling each other as second sources to enhance customer design and procurement flexibility;

➁ Rohm adopts Infineon's top-side cooling platform (e.g., TOLT, Q-DPAK) for improved power density, while Infineon integrates Rohm's DOT-247 package to expand its SiC half-bridge solutions;

➂ The partnership aims to extend to silicon and wide-bandgap technologies (SiC, GaN) for broader customer solutions and industry innovation.

➀ Littelfuse launched the IX3407B, a single-channel isolated gate driver delivering ±7A output with a 2.5 kV capacitive isolation barrier and 150kV/μs transient immunity, supporting MOSFETs, SiC MOSFETs, and IGBT gates;

➁ Features include under-voltage lock-out, active output shutdown for gate discharge during supply failure, and operation up to 1MHz with low propagation delays;

➂ Targets industrial and renewable energy applications, such as motor drives and solar inverters, packaged in a wide SOIC-8 format.

➀ Microchip Technology and Delta Electronics announced a collaboration to design silicon carbide (SiC)-based power supplies;

➁ SiC's wide-bandgap properties enable smaller, more efficient power solutions for high-voltage and high-power applications;

➂ Microchip emphasized SiC's growing importance, with its VP noting the material's role in advancing power supply performance.

➀ Nexperia launches 20A 1,200V SiC Schottky diodes with merged PiN structure, enhancing surge current capability (135A for 10ms at 25°C);

➀ Offers two packaging options: TO-247 through-hole and D2PAK surface-mount, with minor power rating differences (200W vs. 190W at 25°C);

➁ Targets industrial applications such as servers, telecom, and solar inverters, while Vishay recently released smaller 1-2A 1,200V SiC diodes in 2.6mm x 5.2mm packages.

➀ Vishay launched third-gen 650V/1200V SiC Schottky diodes in SlimSMA HV package (2.6x5.2mm) with 3.2mm creepage distance and reduced profile;

➁ Features merged PIN-Schottky technology for stable switching performance across temperatures (Q=7.2-13nC) and ultra-low 1.3-1.35V forward voltage;

➂ Designed for bootstrap/anti-parallel/PFC applications in DC-DC/AC-DC converters with 175℃ operation and positive temp coefficient for parallel use.

➀ Rhopoint Components introduces the CMT-PLA3SB12340, a 1.2kV 260A three-phase SiC power module capable of delivering up to 340A at 25°C for electric vehicles;

➁ The module offers 5kV isolation, integrated gate driver power supplies, fault flags, and requires only 12V-18V input with PWM signals;

➂ Designed for automotive and industrial applications, it features compact dimensions (104 x 154 x 34mm), thermal management (0.183°C/W), and operates at -40°C to +175°C.

➀ Toshiba launched four 650V industrial SiC MOSFETs in compact 8×8mm DFN packages, featuring lower switching losses (55% turn-on and 25% turn-off reduction) compared to prior generations；

➁ The flagship TW054V65C model offers 54mΩ typical on-resistance, improved gate-drive stability via a separate source contact, and operates at +18V/0V gate drive without negative voltage requirements；

➂ Targeted applications include industrial SMPS, EV chargers, UPS systems, and solar inverters, with enhanced temperature stability (Rds(on) varies only 54-58mΩ from 25°C to 150°C).

➀ Power Integrations unveiled five 800V automotive reference designs using 1,700V InnoSwitch3-AQ flyback converters, targeting traction inverter gate drivers, emergency power, and auxiliary systems;

➁ Designs feature planar/wound transformers and InSOP-28G packaging with 5.1mm creepage to eliminate conformal coating;

➂ InnoSwitch3-AQ integrates a 1.7kV SiC switch, supports 30-1,000V input, and delivers up to 120W with <15mW no-load consumption.

➀ SemiQ is developing 1,200V SiC MOSFETs for solar inverters with avalanche testing up to 800mJ, co-packaged with silicon carbide Schottky diodes.

➁ Four devices are introduced with channel on-resistance ranging from 8.4mΩ to 16.5mΩ.

➂ Additional devices with 330mJ avalanche testing and 39mΩ on-resistance are also mentioned, with some offering ultra-fast switching capabilities.

➀ SemiQ Inc.推出了一款新的1200V SiC MOSFET六合一模块，专为电动汽车充电、能源存储、电机驱动和可再生能源平台等高需求应用设计；

➁ 模块集成了坚固的平面技术SiC MOSFET，具备低开关损耗、高功率密度及简化系统集成的特点；

➂ 产品支持连续漏极电流最高达30A，脉冲漏极电流可达70A，尺寸紧凑且可靠性高。

Thermic Edge Ltd proudly introduces its new Atomic Layer Deposition (ALD) System, designed to accelerate the integration of 2D materials into next-generation semiconductor devices. The system combines single-chamber ALD and high-temperature annealing, reducing contamination risks and improving process efficiency. It supports wafer-scale processing up to 8 inches and ensures uniform deposition across large-area substrates. The system features a showerhead gas delivery system for uniform gas distribution, precise temperature control, and multi-gas compatibility for oxide, sulfide, and nitride processing.

➀ Onsemi推出首款基于1200V碳化硅（SiC）MOSFET的SPM 31智能电源模块（IPMs），提供更高的能效和功率密度，同时减小了体积。

➁ 这些模块适用于多种工业系统，如AI数据中心的EC风扇、热泵、HVAC系统、伺服电机、变频驱动器（VFD）以及工业泵和风扇，可显著降低能耗和成本。

➂ SPM 31 IPMs具有低损耗、内置低压保护、统一PCB设计支持不同电流选项等特点，有助于减少开发时间并提高整体系统安全性。

➀ Mazda and Rohm have signed a deal to develop GaN-based automotive power electronics.

➁ GaN can reduce power conversion losses and contribute to the miniaturisation of components through high-frequency operation.

➂ The collaboration aims to unveil a demonstration model within FY2025 and practical implementation for FY2027.

➀ MICROTEST has introduced the VIP ULTRA tester, the latest addition to its VIP Extended product line, designed specifically for testing Wide Band Gap (WBG) devices made from Silicon Carbide (SiC) and Gallium Nitride (GaN).

➁ The VIP ULTRA supports multiple configurations with voltage capabilities of 1.7kV or 4kV and current capacities up to 250A, offering high parallelism for testing high-power chips.

➂ This advanced tester is particularly effective for testing high-power chips at the silicon wafer level, ensuring functionality before chip dicing and integration, driven by increasing demands in automotive and industrial sectors.

➀ Nexperia has introduced industry-leading 1200 V silicon carbide (SiC) MOSFETs with top-side cooling, designed for high-power applications such as EV charging stations, BESS, and photovoltaic inverters.

➁ These MOSFETs feature enhanced thermal performance, low inductance, and improved power density due to the innovative X.PAK package that combines SMD and through-hole cooling benefits.

➂ The devices maintain stable performance across a wide temperature range (25°C to 175°C), offering better thermal management and reliability compared to conventional options.

➀ Nexperia has launched a 1,200V 30mΩ silicon carbide mosfet in a top-side-cooled plastic package with a 18.5 x 14mm footprint.

➁ The device is rated to handle 68A at 25°C and 48A at 100°C, as well as 160A pulses.

➂ The package combines the assembly benefits of SMD with the cooling efficiency of through-hole technology, ensuring optimal heat dissipation.

➀ Infineon has launched the CoolSiC Schottky diode 2000 V G5 product family, its first discrete SiC diode with a breakdown voltage of 2000V, packaged in TO-247-2.

➁ The product is suitable for applications with DC link voltages up to 1500 V DC, such as solar and EV chargers.

➂ The diode allows for higher power levels and reduced component count, simplifying the overall design.

➀ Infineon Technologies AG has launched the industry's first discrete 2000 V silicon carbide (SiC) Schottky diodes, known as the CoolSiC Schottky Diode 2000 V G5 family, in September 2024. These diodes are now available in the TO-247-2 package, enabling easier design transitions and reducing component count by up to 50%.

➁ The diodes offer several key features such as no reverse recovery current, no forward recovery, high surge current capability, temperature-independent switching behavior, low forward voltage drop, and consistent forward voltage characteristics. They are designed to work optimally with Infineon’s 2000 V CoolSiC MOSFETs.

➂ The new diodes are ideal for applications like solar inverters and electric vehicle chargers, supporting higher power levels and enhancing system performance through simplified designs and improved efficiency.

➀ The Changan-SIDA SiC project, a joint venture between Changan's Deep Blue Auto and SIDA Semiconductor, is set to begin production with an initial capacity of 1.8 units.

➁ The project is expected to reach full production in June, with a first-phase capacity of 500,000 units and a second-phase capacity of 1.8 million units.

➂ SIDA Semiconductor, founded in 2005, specializes in the design, research, production, and sales of IGBT and SiC power semiconductor chips and modules.

➀ An inauguration ceremony has been held for a $3.2 billion SiC fab in Chongqing, China, a joint venture between Sanan Optoelectronics and STMicroelectronics.

➁ Sanan holds a 51% stake, with ST holding 49%. The fab is expected to start volume production of 8” SiC ICs in Q4 2025 using ST's SiC process technology.

➂ When fully operational in 2028, the fab will have a capacity of 40k wpm. Sanan will also build an 8-inch SiC substrate facility to supply wafers to the JV under a long-term agreement.