03/20/2025, 01:51 PM UTC
行业领先的1200 V SiC MOSFETsIndustry Leading 1200 V SiC MOSFETs
<p>➀ Nexperia推出了行业领先的1200 V碳化硅（SiC）MOSFET，采用顶部冷却设计，适用于电动汽车充电站、电池储能系统（BESS）和光伏逆变器等高功率应用。</p><p>➁ 这些MOSFET通过创新的X.PAK封装实现了卓越的热性能、低电感和更高的功率密度，结合了表面贴装和通孔冷却的优势。</p><p>➂ 设备在宽温度范围（25°C至175°C）内保持稳定性能，相较于传统方案提供了更好的热管理和可靠性。</p><p>➀ Nexperia has introduced industry-leading 1200 V silicon carbide (SiC) MOSFETs with top-side cooling, designed for high-power applications such as EV charging stations, BESS, and photovoltaic inverters.</p><p>➁ These MOSFETs feature enhanced thermal performance, low inductance, and improved power density due to the innovative X.PAK package that combines SMD and through-hole cooling benefits.</p><p>➂ The devices maintain stable performance across a wide temperature range (25°C to 175°C), offering better thermal management and reliability compared to conventional options.</p>
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