➀ Nexperia launches NMUX27518 six-channel bidirectional multiplexers operating at 500MHz, supporting analog/digital signals (1.08-3.63V) with 500ps port-to-port skew;

➁ Features low on-resistance (8-31Ω), -58dB off-state crosstalk, and 1.8V-compatible control inputs, targeting automotive (AEC-Q100) and consumer electronics (notebooks, servers);

➂ Toshiba’s 26.2GHz 4-channel multiplexer is noted as a higher-speed alternative.

➀ Nexperia launches 20A 1,200V SiC Schottky diodes with merged PiN structure, enhancing surge current capability (135A for 10ms at 25°C);

➀ Offers two packaging options: TO-247 through-hole and D2PAK surface-mount, with minor power rating differences (200W vs. 190W at 25°C);

➁ Targets industrial applications such as servers, telecom, and solar inverters, while Vishay recently released smaller 1-2A 1,200V SiC diodes in 2.6mm x 5.2mm packages.

➀ Nexperia has introduced industry-leading 1200 V silicon carbide (SiC) MOSFETs with top-side cooling, designed for high-power applications such as EV charging stations, BESS, and photovoltaic inverters.

➁ These MOSFETs feature enhanced thermal performance, low inductance, and improved power density due to the innovative X.PAK package that combines SMD and through-hole cooling benefits.

➂ The devices maintain stable performance across a wide temperature range (25°C to 175°C), offering better thermal management and reliability compared to conventional options.

➀ Nexperia has launched a 1,200V 30mΩ silicon carbide mosfet in a top-side-cooled plastic package with a 18.5 x 14mm footprint.

➁ The device is rated to handle 68A at 25°C and 48A at 100°C, as well as 160A pulses.

➂ The package combines the assembly benefits of SMD with the cooling efficiency of through-hole technology, ensuring optimal heat dissipation.