03/19/2025, 06:16 AM UTC
英飞凌推出2000V CoolSiC肖特基二极管，适用于太阳能和电动汽车充电器SiC diode with breakdown voltage of 2000V in TO-247-2 package
➀ 英飞凌推出了CoolSiC肖特基二极管2000 V G5产品系列，这是其首款 breakdown voltage 达到2000V的离散SiC二极管，采用TO-247-2封装。
➁ 该产品适用于直流链电压高达1500 V DC的应用，如太阳能和电动汽车充电器。
➂ 该二极管允许实现更高的功率水平，同时减少组件数量，简化整体设计。
➀ Infineon has launched the CoolSiC Schottky diode 2000 V G5 product family, its first discrete SiC diode with a breakdown voltage of 2000V, packaged in TO-247-2.
➁ The product is suitable for applications with DC link voltages up to 1500 V DC, such as solar and EV chargers.
➂ The diode allows for higher power levels and reduced component count, simplifying the overall design.
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