03/18/2025, 05:57 AM UTC
适用于高功率应用的2000 V SiC肖特基二极管2000 V SiC Schottky Diode For High-Power Applications
➀ 英飞凌科技公司于2024年9月推出了业界首款离散型2000 V碳化硅（SiC）肖特基二极管——CoolSiC Schottky Diode 2000 V G5系列，现已提供TO-247-2封装，可简化设计过渡并减少高达50%的元件数量。
➁ 这些二极管具有多项关键特性，包括无反向恢复电流、无正向恢复、高浪涌电流能力、温度无关的开关行为、低正向电压降以及一致的正向电压特性。它们与英飞凌的2000 V CoolSiC MOSFET完美匹配。
➂ 新型二极管非常适合太阳能逆变器和电动汽车充电器等应用，支持更高功率水平，并通过简化设计和提高效率提升系统性能。
➀ Infineon Technologies AG has launched the industry's first discrete 2000 V silicon carbide (SiC) Schottky diodes, known as the CoolSiC Schottky Diode 2000 V G5 family, in September 2024. These diodes are now available in the TO-247-2 package, enabling easier design transitions and reducing component count by up to 50%.
➁ The diodes offer several key features such as no reverse recovery current, no forward recovery, high surge current capability, temperature-independent switching behavior, low forward voltage drop, and consistent forward voltage characteristics. They are designed to work optimally with Infineon’s 2000 V CoolSiC MOSFETs.
➂ The new diodes are ideal for applications like solar inverters and electric vehicle chargers, supporting higher power levels and enhancing system performance through simplified designs and improved efficiency.
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