04/25/2025, 09:37 AM UTC
1200V SiC 沙漠硅MOSFET通过800mJ雪崩测试1,200V SiC mosfets are avalanche tested to 800mJ
➀ 慧荣科技正在开发针对太阳能逆变器的1200V碳化硅MOSFET，其雪崩测试达到800mJ，并与碳化硅肖特基二极管共同封装。
➁ 介绍了四种设备，其沟道导通电阻范围从8.4mΩ到16.5mΩ。
➂ 还提到了其他具有330mJ雪崩测试和39mΩ导通电阻的设备，其中一些提供超快速开关能力。
➀ SemiQ is developing 1,200V SiC MOSFETs for solar inverters with avalanche testing up to 800mJ, co-packaged with silicon carbide Schottky diodes.
➁ Four devices are introduced with channel on-resistance ranging from 8.4mΩ to 16.5mΩ.
➂ Additional devices with 330mJ avalanche testing and 39mΩ on-resistance are also mentioned, with some offering ultra-fast switching capabilities.
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