05/20/2025, 10:47 AM UTC
东芝推出8×8mm封装的650V工业级碳化硅MOSFET650V industrial SiC mosfets in 8 x 8mm package
➀ 东芝推出四款采用8×8mm DFN封装的650V工业级碳化硅MOSFET，其中TW054V65C在400V/20A半桥应用中开关损耗较前代降低55%（开通）和25%（关断）；
➁ 旗舰型号TW054V65C典型导通电阻为54mΩ，配备独立源极引脚以优化栅极驱动，采用+18V/0V驱动无需负压，温度特性稳定（25°C-150°C导通电阻仅54-58mΩ）；
➂ 适用于工业电源、电动汽车充电桩、不间断电源及光伏逆变器，同时强调低Rds(on)×Qgd优值（54mΩ×6.2nC）和3-5V阈压特性。
➀ Toshiba launched four 650V industrial SiC MOSFETs in compact 8×8mm DFN packages, featuring lower switching losses (55% turn-on and 25% turn-off reduction) compared to prior generations；
➁ The flagship TW054V65C model offers 54mΩ typical on-resistance, improved gate-drive stability via a separate source contact, and operates at +18V/0V gate drive without negative voltage requirements；
➂ Targeted applications include industrial SMPS, EV chargers, UPS systems, and solar inverters, with enhanced temperature stability (Rds(on) varies only 54-58mΩ from 25°C to 150°C).
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