➀ Cambridge GaN Devices will demonstrate its ICeGaN products at the IEEE Energy Conversion Congress and Expo in Phoenix. The demos include a 3 kW PFC reference design, a QORVO motor drive evaluation kit, and a slim 100W adapter among others.➁ The company's ICeGaN products are monolithic GaN ICs with power HEMT and support circuitry.➂ The demo also features a comparison of ICeGaN versus discrete GaN circuits.

1. Cambridge GaN Devices introduces the ICeGaN P2 series of power ICs. 2. The series features on-resistance levels as low as 25 mΩ.

1. Cambridge GaN Devices (CGD) has introduced the new ICeGaN P2 series GaN Power ICs with on-resistance as low as 25 mΩ, targeting high-power applications like data centres and inverters. 2. The ICs support multi kW power levels with high efficiency, featuring advanced packaging and simplified gate driver design. 3. The new series aims to meet the growing demand for energy-efficient solutions in high-density computing and motor control inverters.

1. Cambridge GaN Devices (CGD) has introduced the ICeGaN™ GaN power IC, designed for high-efficiency applications in data centers, inverters, and industrial power supplies. 2. The new ICeGaN™ P2 series features a low RDS(on) of 25 mΩ, supporting multi-kW power applications. 3. CGD's Chief Commercial Officer, Andrea Bricconi, highlighted the growing demand for GaN solutions in data centers due to the increasing energy consumption from AI growth.

1、剑桥 GaN 设备推出两种新的封装：DHDFN-9-1 和 BHDFN-9-1，这些封装旨在提高热性能和简化检测。 2、DHDFN-9-1 是一种薄型双面冷却封装，具有低热阻抗和小 footprint。 3、BHDFN-9-1 是一种底面冷却封装，具有湿润表面和小 footprint。

1、剑桥GAN设备（CGD）是一家无晶圆厂洁净技术半导体公司，致力于开发多种节能的氮化镓（GaN）器件。 2、CGD正与全球领先的连接和电源解决方案供应商Qorvo合作开发GaN在电机控制应用中的参考设计和评估套件（EVK）。 3、CGD旨在加快GaN功率IC在无刷直流电机（BLDC）和永磁同步电机（PMSM）应用中的使用，打造更高功率、高效、紧凑和可靠的系统。