06/19/2024, 03:11 PM UTC
新型ICeGaN氮化镓功率IC实现数据中心、逆变器及工业电源供应器最高效率New ICeGaN GaN Power ICs Enable The Highest Efficiency Levels For Data Centres, Inverters & Industrial SMPS
1. 剑桥氮化镓设备公司（CGD）推出了新型ICeGaN P2系列氮化镓功率集成电路，其导通电阻低至25毫欧，专为数据中心和逆变器等高功率应用设计。2. 这些集成电路支持多千瓦功率级别，具有高效率，采用先进的封装技术和简化的栅极驱动器设计。3. 新系列旨在满足高密度计算和电机控制逆变器领域对高效能解决方案日益增长的需求。1. Cambridge GaN Devices (CGD) has introduced the new ICeGaN P2 series GaN Power ICs with on-resistance as low as 25 mΩ, targeting high-power applications like data centres and inverters. 2. The ICs support multi kW power levels with high efficiency, featuring advanced packaging and simplified gate driver design. 3. The new series aims to meet the growing demand for energy-efficient solutions in high-density computing and motor control inverters.
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