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electronicsweekly

09/11/2024, 07:59 PM UTC

英飞凌推出1.8MW硅碳化物半桥，处理速度低于500纳秒SiC half-bridge handles 1.8MW in under 500ns

➀ 英飞凌推出了一种硅碳化物半桥模块，能在500纳秒内处理1.8MW的功率；➁ 该模块配备了3,300V 1,000A 1.9 mΩ的 trench 沟槽式MOSFET；➂ 该技术荣获德国联邦总统技术革新奖。➀ Infineon has launched a SiC half-bridge module capable of handling 1.8MW in under 500ns; ➁ The module features 3,300V 1,000A 1.9 mΩ trench mosfets; ➂ The technology won a German Federal President’s Award for Technology and Innovation.

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