10/23/2024, 09:48 PM UTC
英飞凌推出2kV 80A碳化硅肖特基二极管2kV 80A SiC Schottky
➀ 英飞凌推出一款2kV 80A碳化硅肖特基二极管；➁ 该二极管型号为IDYH80G200C5，适用于高压应用，具有2,000V的击穿电压；➁ 该二极管采用TO-247PLUS-4-HCC封装，具有14mm的爬电距离和5.4mm的间隙，面向太阳能逆变器、电动汽车充电器等应用。➀ Infineon introduces a 2kV 80A silicon carbide Schottky diode; ➁ The diode, IDYH80G200C5, is designed for high-power applications with a breakdown voltage of 2,000V; ➂ The diode features a TO-247PLUS-4-HCC package with 14mm creepage and 5.4mm clearance, targeting applications like solar inverters and EV chargers.
---
本文由大语言模型（LLM）生成，旨在为读者提供半导体新闻内容的知识扩展（Beta）。
