08/09/2024, 01:21 PM UTC
Imec与ASML利用高数值孔径（High NA）在单次曝光中实现亚20纳米间距金属层图案化Imec and ASML pattern sub-20nm pitch metal layers in one exposure using High NA
➀ Imec和ASML成功利用高数值孔径（High NA）极紫外光刻技术在单次曝光中实现了亚20纳米间距的金属层图案化。➁ 这些结果展示了高数值孔径极紫外光刻技术在逻辑和存储技术尺寸缩放方面的能力。➂ 这些成就得益于ASML-imec联合实验室的建立，加速了高数值孔径光刻技术在制造业中的引入。➀ Imec and ASML have successfully patterned sub-20nm pitch metal layers using High NA EUV lithography in a single exposure. ➁ The results demonstrate the capability of High NA EUV to enable dimensional scaling of logic and memory technologies. ➂ These achievements were made possible through the joint ASML-imec lab, accelerating the introduction of High NA lithography into manufacturing.
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