06/02/2025, 06:08 AM UTC
英特尔和软银探索HBM替代方案Intel and Softbank explore alternative to HBM
➀ 英特尔与软银合作成立新公司Saimemory，开发堆叠式DRAM技术以替代HBM，目标是将功耗降低一半；
➁ 原型预计两年内完成，2030年前量产，项目总投资7000万美元，软银出资2100万美元，日本政府和机构或参与投资；
➂ 技术源于英特尔、日本高校及合作方，软银将优先获得芯片供应以支持其Arm和Graphcore的AI处理器研发。
➀ Intel and SoftBank jointly established Saimemory to develop a stacked DRAM technology as an alternative to HBM, aiming to reduce power consumption by half;
➁ A prototype is expected within two years, with production targeted by the end of the decade, supported by $70 million in total investment, including $21 million from SoftBank;
➂ The technology originated from Intel, Japanese academia, and partners like Riken and Shinko Electric, with potential government funding and priority supply for SoftBank's AI processors (e.g., Arm and Graphcore).
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