05/16/2025, 05:56 AM UTC
NY CREATES与Fraunhofer IPMS宣布签订联合开发协议，推动300毫米晶圆级存储器件发展NY CREATES and Fraunhofer IPMS Announce Joint Development Agreement to Advance Memory Devices at 300mm Wafer Scale
➀ NY CREATES与Fraunhofer IPMS签署联合开发协议（JDA），共同研发基于300毫米晶圆的先进存储器件，重点开发氧化铪（HfO₂）铁电存储器技术；
➁ 合作将结合Fraunhofer IPMS在HfO₂存储器领域的专长与NY CREATES的Albany NanoTech设施，推动面向神经形态计算的高能效、可扩展存储解决方案；
➂ 该协议延续了双方此前合作，并呼应美国《芯片法案》EUV加速器计划，旨在巩固半导体研发领导地位并促进经济增长。
➀ NY CREATES and Fraunhofer IPMS formalized a Joint Development Agreement (JDA) to co-develop advanced 300mm wafer-scale memory devices, focusing on ferroelectric memory technology using hafnium oxide (HfO₂);
➀ The collaboration aims to enhance energy-efficient, scalable memory solutions for neuromorphic computing applications, leveraging Fraunhofer IPMS's expertise in HfO₂-based memory and NY CREATES' Albany NanoTech Complex facilities;
➂ The partnership builds on prior agreements and aligns with U.S. initiatives like the CHIPS for America EUV Accelerator to strengthen semiconductor R&D leadership and economic growth.
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