➀ Imec has released images of single-exposure patterns using ASML’s high-NA EUV scanner, showcasing logic structures down to a 9.5nm half-pitch. ➁ The patterns include 30nm center-to-center random vias and a DRAM-relevant pattern at P22nm pitch, demonstrating the readiness of the ecosystem for high-resolution EUV lithography. ➂ These patterns were created at the ASML-Imec High NA EUV Lithography Lab in Veldhoven, highlighting the potential of High NA EUV for single-print imaging of aggressively-scaled 2D features.