08/16/2024, 10:41 AM UTC
Imec展示高NA EUV图案化能力Imec Demonstrates High-NA EUV Patterning Capabilities
➀ Imec发布了使用ASML高NA EUV扫描仪的单次曝光图案图像，展示了低至9.5nm半间距的逻辑结构。 ➁ 这些图案包括30nm中心到中心的随机通孔和P22nm间距的与DRAM相关的图案，证明了高分辨率EUV光刻生态系统的准备就绪。 ➂ 这些图案是在ASML-Imec高NA EUV光刻实验室创建的，突显了高NA EUV在单次打印激进缩放的2D特征方面的潜力。➀ Imec has released images of single-exposure patterns using ASML’s high-NA EUV scanner, showcasing logic structures down to a 9.5nm half-pitch. ➁ The patterns include 30nm center-to-center random vias and a DRAM-relevant pattern at P22nm pitch, demonstrating the readiness of the ecosystem for high-resolution EUV lithography. ➂ These patterns were created at the ASML-Imec High NA EUV Lithography Lab in Veldhoven, highlighting the potential of High NA EUV for single-print imaging of aggressively-scaled 2D features.
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