04/26/2025, 10:51 AM UTC
ASML的困境：高数值孔径EUV与低数值孔径EUV多重曝光的对比ASML's Dilemma: High-NA EUV vs Low-NA EUV Multi-Patterning
➀ 分析了低数值孔径和高数值孔径EUV的成本模型，发现高数值孔径EUV单层曝光比现有低数值孔径机器的双层曝光更昂贵。
➁ 多层曝光的低数值孔径EUV可以比高数值孔径实现更细的线宽。
➂ 由于经济和技术障碍，ASML计划到2028年出货20台高数值孔径EUV工具的目标被认为是雄心勃勃且具有挑战性的。
➃ 高数值孔径的经济挑战比低数值孔径的经济挑战更严重，尽管技术挑战可能较小。
➄ 高数值孔径EUV的开发涉及妥协，包括半场缝合、焦深和光刻胶的技术挑战，以及与现有低数值孔径工具相比的成本挑战。
➅ 低数值孔径双层曝光被提出作为高数值孔径EUV的有力替代方案。
➀ The cost model for low-NA and high-NA EUV is analyzed, revealing that high-NA EUV single patterning is more expensive than double-patterning with existing low-NA machines.
➁ Multi-patterning low-NA EUV can achieve finer pitch features than high-NA.
➂ ASML's goal of shipping 20 high-NA EUV tools by 2028 is considered ambitious and challenging due to economic and technological hurdles.
➃ The economic challenges of high-NA are more severe than those of low-NA, despite potentially smaller technical challenges.
➄ The development of high-NA EUV involves compromises, including technical challenges with half-field stitching, depth of focus, and photoresist, as well as cost challenges compared to existing low-NA tools.
➅ Low-NA double patterning is presented as a cost-effective alternative to high-NA EUV.
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