➀ An improved ASM-HEMT hybrid model using ANN parameters is explored for GaN HEMT modeling; ➁ The challenge of accurate wide-range S-parameter fit is addressed; ➂ ANN-based parameter fitting reduces the discrepancy between measurements and simulations.

High-fidelity models incorporating real-world, cross-domain effects are essential for accurate RF system simulation. The surging popularity of gallium nitride (GaN) technology in 5G base stations, satellite communication, defense systems, and other applications raises the bar for transistor modeling. Keysight dives… Read More The post Self-heating and trapping enhancements in GaN HEMT models appeared first on SemiWiki.