<p>➀ ROHM公司推出了650V氮化镓高电子迁移率晶体管(GaN HEMT),采用紧凑且具有高效散热特性的TOLL封装。</p><p>➁ 该产品适用于工业自动化、汽车、电信和可再生能源等行业中的工程师和制造商。</p><p>➂ 新一代GaN-on-Si芯片实现了行业领先的ON电阻和输出电荷性能,有助于提高系统的小型化和能效。</p>
Related Articles
- IQE and X-Fab hook up for GaN6 months ago
- GaN picked for Mazda automotive power project7 months ago
- Next-Generation Tester For High-Power Chips7 months ago
- Inductors: The Tiny Parts Driving Big Power19 days ago
- High-Efficiency GaN Reference Design Powers Solar Race Carsabout 2 months ago
- GaN PSU dev board for solar racing carsabout 2 months ago
- Cycloconverter in Electronics: AC-to-AC Power Conversion3 months ago
- GaN Based Single Phase Cycloconverter Reference Design4 months ago
- Phase-Shifted Full-Bridge Converter Reference Design5 months ago
- Bidirectional 1200 V GaN switch with integrated free-wheeling diodes6 months ago