05/06/2025, 04:30 AM UTC
英飞凌推出CoolSiC MOSFET 750 G2技术Infineon launches CoolSiC MOSFET 750 G2 technology
➀ 英飞凌发布CoolSiC MOSFET 750 V G2技术，提升汽车和工业电源转换应用的系统效率与功率密度；
➁ 该MOSFET的导通电阻（RDS(on)）最高60 mΩ，采用顶部散热封装优化热性能，并通过低栅极电荷设计降低开关损耗；
➂ 符合AEC Q101和JEDEC标准，适用于车载充电器、太阳能逆变器及固态继电器等场景，强调高可靠性和设计兼容性。
➀ Infineon launched its CoolSiC MOSFET 750 V G2 technology, enhancing system efficiency and power density for automotive and industrial power conversion applications;
➁ The MOSFETs feature RDS(on) values up to 60 mΩ, support top-side cooling for thermal performance, and reduce switching losses through optimized gate charge and design;
➂ Compliant with AEC Q101 and JEDEC standards, the technology targets applications like EV chargers, solar inverters, and solid-state relays, emphasizing reliability and design flexibility.
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