06/24/2025, 08:37 AM UTC
全球最高321层4D NAND闪存World’s Highest 321-Layer 4D NAND Flash
➀ SK海力士推出基于321层4D NAND闪存的UFS 4.1存储方案，创行业层数新高；
➁ 实现4300MB/s读取速度，随机读写提升15%-40%，能效提高7%，0.85mm超薄设计适配AI智能手机；
➂ 该1Tb TLC芯片将扩展至SSD产品线，巩固SK海力士全栈AI存储解决方案提供商地位。
➀ SK Hynix unveiled a UFS 4.1 storage solution using 321-layer 4D NAND flash, marking the industry's highest layer count;
➁ It delivers 4300MB/s read speed, 15%-40% faster random operations, 7% power efficiency improvement, and ultra-thin 0.85mm design for AI smartphones;
➂ The 1Tb TLC chip will expand to SSDs, strengthening SK Hynix's position as a full-stack AI memory provider.
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