05/26/2025, 06:56 AM UTC
从5G迈向6G需对半导体进行彻底改革5G To 6G Requires Semiconductor Overhaul
➀ 布里斯托大学研究人员通过改进氮化镓（GaN）射频放大器性能，实现6G无线通信技术突破；
➁ 发现GaN器件的闩锁效应，并利用超晶格城堡沟道场效应晶体管（SLCFETs），在75-110 GHz频段显著提升射频性能；
➂ 该技术突破通过提升半导体器件可靠性和功率密度，为未来自动驾驶、远程实时医疗等应用奠定基础。
➀ Researchers at the University of Bristol developed gallium nitride (GaN) radio frequency amplifiers, pushing performance boundaries to enable 6G wireless communication;
➁ The discovery of a latch-effect in GaN devices and the use of superlattice castellated field effect transistors (SLCFETs) significantly improved radio frequency capabilities in the W-band (75–110 GHz);
➂ This breakthrough could facilitate future technologies like real-time remote healthcare and self-driving cars through enhanced semiconductor reliability and power density.
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本文由大语言模型（LLM）生成，旨在为读者提供半导体新闻内容的知识扩展（Beta）。
