05/21/2025, 06:02 AM UTC
蒸气法制备锡晶体管Tin Transistors Made By Vapor
➀ 研究人员开发了一种气相沉积法，利用氯化铅（PbCl₂）制备锡卤化物钙钛矿薄膜晶体管（TFT），显著提升了器件性能和稳定性；
➁ 该晶体管实现了33.8 cm²/V·s的空穴迁移率和约10⁸的开/关电流比，性能超越传统溶液法器件及商用IGZO晶体管；
➂ 该技术具备规模化生产潜力，可应用于低成本大面积电子器件和高能效OLED显示，未来将聚焦材料优化与三维集成工艺。
➀ Researchers developed vapor-deposited tin-halide perovskite thin-film transistors (TFTs) using PbCl₂ to enhance performance and stability;
➁ The TFTs achieved high hole mobility (33.8 cm²/V·s) and on/off current ratios (~10⁸), outperforming solution-based methods and commercial IGZO transistors;
➂ This scalable process holds potential for low-cost, large-area electronics and energy-efficient OLED displays, with future focus on materials optimization and 3D integration.
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