<p>➀ Researchers at the University of Würzburg developed a topological insulator functioning at higher temperatures (−213°C), overcoming previous limitations requiring near-absolute-zero conditions;</p><p>➁ The material features a three-layer quantum well (InAs/GaInSb/InAs), enhancing bandgap energy and structural symmetry for robust, low-loss electron transport;</p><p>➂ This breakthrough paves the way for energy-efficient topological electronics compatible with silicon chip technology, enabling scalable and reliable applications.</p>