<p>➀ Researchers at the University of California Santa Barbara developed a method to monolithically integrate III-V lasers on silicon substrates, enabling efficient O-band wavelength operation with low signal dispersion;</p><p>➀ The team used strain-engineered buffer layers and InAs quantum dots as the gain medium to minimize crystal defects, combined with precise etching and optical coupling techniques to reduce waveguide attenuation;</p><p>➂ The resulting lasers demonstrated reliable performance up to 105°C and a projected lifespan of 6.2 years at 35°C, marking progress toward scalable on-chip light sources for photonic ICs.</p>