11/26/2024, 08:08 AM UTC
三星在3D NAND光刻过程中成功大幅减少光刻胶使用Samsung succeeds in reducing use of PR during 3D NAND lithography
➀ 三星在其3D NAND闪存生产的光刻过程中显著减少了光刻胶的使用量。➁ 公司计划在未来的NAND生产中仅使用之前一半的光刻胶量。➂ 这项举措是三星提高制造效率和降低成本的努力之一。➀ Samsung has significantly reduced the amount of photoresist (PR) used in the photolithography process for its 3D NAND flash production. ➁ The company plans to use only half the amount of PR in future NAND production. ➂ The move is part of Samsung's effort to enhance its manufacturing efficiency and reduce costs.---
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