02/10/2025, 01:39 PM UTC
FinFET到GAAFET的突破性转变Breakthrough Transformation from FinFET to GAAFET
➀ 文章讨论了半导体架构从平面晶体管发展到FinFET，再到环绕栅极（GAA）技术的演变。
➁ GAAFET通过其更宽的薄片，提供了比FinFET更好的驱动电流和性能，以及更好的静电特性。
➂ 向GAA的过渡需要重新思考物理设计过程，包括垂直集成和优化的布线策略。
➃ 创新的电源传输网络和先进的EDA工具对于保持电源完整性和稳定性至关重要。
➄ GAA技术为优化半导体设计中的功率、性能和面积（PPA）提供了机会。
➅ 通过DFM工具和先进的验证方法解决成本、复杂性和制造问题。
➀ The article discusses the evolution of semiconductor architecture from planar transistors to FinFETs and now to Gate-All-Around (GAA) technology.
➁ GAAFET, with its wider sheets, offers improved drive current and performance, and better electrostatic characteristics compared to FinFETs.
➂ The transition to GAA requires rethinking the physical design process, including vertical integration and optimized routing strategies.
➃ Innovative power delivery networks and advanced EDA tools are crucial for maintaining power integrity and stability.
➄ GAA technology presents opportunities to optimize power, performance, and area (PPA) in semiconductor designs.
➅ Challenges such as cost, complexity, and manufacturing issues are addressed through DFM tools and advanced verification methods.
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本文由大语言模型（LLM）生成，旨在为读者提供半导体新闻内容的知识扩展（Beta）。
