02/25/2025, 09:02 PM UTC
详解第三代半导体材料：碳化硅和氮化镓In-Depth Analysis of Third-Generation Semiconductor Materials: Silicon Carbide and Gallium Nitride
<p>➀ 半导体材料的发展历程，从第一代到第三代；</p><p>➁ 碳化硅（SiC）和氮化镓（GaN）的独特物理特性，如宽带隙、高击穿场强、高电子迁移率和优异的热导率；</p><p>➂ SiC和GaN的市场格局，包括市场规模、主要玩家和应用领域。</p><p>➀ The development history of semiconductor materials, from the first generation to the third generation;</p><p>➁ The unique physical properties of silicon carbide (SiC) and gallium nitride (GaN), such as wide bandgap, high breakdown field, high electron mobility, and excellent thermal conductivity;</p><p>➂ The market landscape of SiC and GaN, including market size, key players, and application areas.</p>
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本文由大语言模型（LLM）生成，旨在为读者提供半导体新闻内容的知识扩 展（Beta）。
