09/27/2024, 07:41 AM UTC
IGBT的发明：新的目标The Invention of IGBT: New Goals
➀ 本文介绍了名为BiDFET的新型器件的开发，旨在提高矩阵转换器的效率和可靠性。➁ 文章讨论了BiDFET的第一代和第二代的设计、性能及其在功率转换系统中的应用潜力。➂ 文章还探讨了BiDFET对转换器拓扑、可靠性和效率的影响，并展示了使用SiC BiDFET器件的AC/DC转换器原型实验结果。➀ The article introduces the development of a new device called BiDFET, aiming to improve the efficiency and reliability of matrix converters. ➁ It discusses the first and second generations of BiDFET, highlighting their design, performance, and potential applications in power conversion systems. ➂ The article also explores the impact of BiDFET on converter topology, reliability, and efficiency, and presents experimental results of a prototype AC/DC converter using SiC BiDFET devices.
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