02/15/2025, 03:06 AM UTC
闪存突破400层壁垒Flash Memory Breaks Through 400-Layer Barrier
➀ 三星电子将发布1Tbit 3D NAND闪存，存储单元层数达到400多层，内存密度高达28.2Gbit/mm2，采用TLC方法。
➁ Kioxia和西部数据联合开发团队报告了一款1Tbit 3D NAND闪存，字线层数增加到332层，内存密度高达29Gbit/mm2，采用TLC方法。
➂ SK海力士开发出2Tbit 3D NAND闪存，字线层数提升至321层，并采用QLC方式进行多值存储。
➃ 三星目前正在开发第九代3D NAND，有286层，并正在开发400层技术。
➄ SK海力士正在探索在超低温下制造3D NAND的潜力，计划于2025年量产超过400层的新一代产品。
➅ Kioxia计划到2031年大规模生产层数超过1,000层的3D NAND存储器。
➆ 向1,000层3D NAND的迈进需要制造工艺在垂直、横向和逻辑方面的多项改进。
➀ Samsung Electronics is releasing a 1Tbit 3D NAND flash memory with storage cell layers up to 400+ layers, achieving a memory density of 28.2Gbit/mm2 using TLC method.
➁ Kioxia and Western Digital's joint development team is reporting a 1Tbit 3D NAND flash memory with 332 layers, with a memory density of up to 29Gbit/mm2.
➂ SK Hynix has developed a 2Tbit 3D NAND flash memory with 321 layers, using QLC method multi-value storage.
➃ Samsung is currently developing the 9th generation 3D NAND with 286 layers and is working on 400-layer technology.
➄ SK Hynix is exploring the potential of manufacturing 3D NAND at ultra-low temperatures, aiming to produce new generation products with over 400 layers by 2025.➅ Kioxia plans to mass-produce 3D NAND storage devices with over 1,000 layers by 2031.
➆ The journey towards 1,000-layer 3D NAND involves multiple improvements in manufacturing processes, including vertical, horizontal, and logical aspects.
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