02/15/2025, 11:06 AM UTC
闪存突破400层壁垒Flash Memory Breaks Through 400-Layer Barrier
<p>➀ 三星电子将发布1Tbit 3D NAND闪存，存储单元层数达到400多层，内存密度高达28.2Gbit/mm2，采用TLC方法。</p><p>➁ Kioxia和西部数据联合开发团队报告了一款1Tbit 3D NAND闪存，字线层数增加到332层，内存密度高达29Gbit/mm2，采用TLC方法。</p><p>➂ SK海力士开发出2Tbit 3D NAND闪存，字线层数提升至321层，并采用QLC方式进行多值存储。</p><p>➃ 三星目前正在开发第九代3D NAND，有286层，并正在开发400层技术。</p><p>➄ SK海力士正在探索在超低温下制造3D NAND的潜力，计划于2025年量产超过400层的新一代产品。</p><p>➅ Kioxia计划到2031年大规模生产层数超过1,000层的3D NAND存储器。</p><p>➆ 向1,000层3D NAND的迈进需要制造工艺在垂直、横向和逻辑方面的多项改进。</p><p>➀ Samsung Electronics is releasing a 1Tbit 3D NAND flash memory with storage cell layers up to 400+ layers, achieving a memory density of 28.2Gbit/mm2 using TLC method.</p><p>➁ Kioxia and Western Digital's joint development team is reporting a 1Tbit 3D NAND flash memory with 332 layers, with a memory density of up to 29Gbit/mm2.</p><p>➂ SK Hynix has developed a 2Tbit 3D NAND flash memory with 321 layers, using QLC method multi-value storage.</p><p>➃ Samsung is currently developing the 9th generation 3D NAND with 286 layers and is working on 400-layer technology.</p>➄ SK Hynix is exploring the potential of manufacturing 3D NAND at ultra-low temperatures, aiming to produce new generation products with over 400 layers by 2025.</p><p>➅ Kioxia plans to mass-produce 3D NAND storage devices with over 1,000 layers by 2031.</p><p>➆ The journey towards 1,000-layer 3D NAND involves multiple improvements in manufacturing processes, including vertical, horizontal, and logical aspects.</p>
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