10/11/2024, 09:15 AM UTC
一种新型存储器，结合了DRAM和SRAM的优势A New Storage Device Combining the Advantages of DRAM and SRAM
➀ 混合型内存的研究将DRAM的密度与SRAM的速度相结合，得到了CHIPS和科学法案的资助。该中心将获得美国国防部1630万美元的资助。 ➁ 斯坦福大学的团队正在开发一种替代内存设计，该设计结合了SRAM和DRAM的优点。DRAM可以在相对较小的空间中存储大量数据，但其读取速度相对较慢。SRAM可以更快地读取数据，但其单元相对较大。斯坦福团队的增益单元内存结合了DRAM的小空间和几乎与SRAM一样快的速度。 ➂ 通过将硅读取晶体管与氧化铟锡写入晶体管相结合，制造出性能更好的混合增益单元存储器，从而克服了数据泄漏快等限制。该设备可以保持其位超过5000秒（普通DRAM必须每64毫秒刷新一次），并且比类似的氧化物-氧化物增益单元快约50倍。➀ The research on hybrid memory combines the density of DRAM with the speed of SRAM, receiving funding from CHIPS and the Science Act. The hybrid gain cell (HGC) memory research is one of the projects of the California-Pacific-Northwest AI Hardware Center, which will receive $16.3 million in funding from the U.S. Department of Defense. ➁ The team at Stanford University is developing an alternative memory design that combines the advantages of SRAM and DRAM. DRAM can store a large amount of data in a relatively small space, but its read speed is relatively slow. SRAM can read data faster, but its units are relatively large. The gain cell memory developed by the Stanford team combines the small space of DRAM and the almost as fast speed of SRAM. ➂ The mixed gain cell storage device overcomes limitations by combining silicon read transistors with indium tin oxide write transistors, achieving a bit retention time of over 5000 seconds and about 50 times faster than similar oxide-oxide gain cells.
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