12/20/2024, 09:38 PM UTC
先进EUV光刻：光刻胶和蚀刻技术中的挑战与创新Advanced EUV Lithography: Challenges and Innovations in Photoresist and Etching Techniques
<p>➀ 光刻胶在半导体制造中的重要性以及为了利用新的架构和材料而必须进行分辨率缩放。</p><p>➁ 关于产量挑战的讨论，特别是边缘放置误差（EPE）和线边缘粗糙度（LER），以及改善这些问题的理解和工具的需求。</p><p>➂ 定向自组装（DSA）作为减少线/空间光刻胶校正误差的策略介绍，及其在18纳米和21纳米金属间距中的应用。</p><p>➃ 在12纳米间距处匹配节点工艺的新光刻胶的需求，以及缺陷密度对EUV芯片成本的影响。</p><p>➄ 在工艺变化探索中，需要高吞吐量实验方法、随机缺陷的化学分析以及在3D长度尺度上的探测的重要性。</p><p>➅ 行业对高量子产率光刻胶、缺陷形成分析以及有机光刻胶的干式显影技术的需求。</p><p>➀ The importance of photoresist in semiconductor manufacturing and the necessity for resolution scaling to utilize new architectures and materials.</p><p>➁ The discussion on yield challenges, particularly with edge placement error (EPE) and line edge roughness (LER), and the need for improved understanding and tools to mitigate these issues.</p><p>➂ The introduction of directed self-assembly (DSA) as a strategy to reduce line/space photoresist correction errors and its application in 18 nm and 21 nm metal pitch.</p><p>➃ The need for new photoresists to match node processes at 12 nm pitch and the impact of defect density on EUV chip cost.</p><p>➄ The importance of high-throughput experimental methods, chemical analysis of random defects, and 3D length scale detection in process change exploration.</p><p>➅ The industry's demand for high quantum yield photoresists, defect formation analysis, and dry development techniques for organic photoresists.</p>
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本文由大语言模型（LLM）生成，旨在为读者提供半导体新闻内容的知识扩展（Beta）。
