02/12/2025, 11:59 PM UTC
近年厚硅AWG进展Recent Progress in Thick Silicon AWG
➀ VTT在3µm绝缘体上硅（SOI）平台上设计并实现了一种超宽带（UWB）、0到L波段、偏振不敏感（PI）的1×12 100GHz通道间距阵列波导光栅（AWG），插入损耗为-0.82 dB至-1.52 dB。
➁ 3µm厚硅波导具有超低的传播损耗（0.1 dB/cm），在超宽波长范围（1.2µm至4µm）内提供低至零的双折射。
➂ 在3µm绝缘体上硅（SOI）平台上设计并制造了一种基于级联PEG的40通道100GHz间隔（de-mux/mux）复用器，具有低串扰和低插入损耗。
➀ A UWB, 0 to L band, polarization-insensitive (PI) 1×12 100GHz channel spacing arrayed waveguide grating (AWG) was designed and implemented a 3µm insulator on silicon (SOI) platform by VTT, with insertion losses ranging from -0.82 dB to -1.52 dB.
➁ A 3µm thick silicon waveguide has ultra-low propagation loss (0.1 dB/cm) and low birefringence over a wide wavelength range (1.2µm to 4µm).
➂ A 40-channel 100GHz spacing (de-mux/mux) multiplexer based on cascaded PEG was designed and manufactured on a 3µm SOI platform, with low crosstalk and low insertion loss.
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