10/04/2024, 11:49 AM UTC
华为与UCSB硅基外延生长量子点激光器的对比Comparison of Si-Based Epitaxial Quantum Dot Lasers between Huawei and UCSB
➀ 讨论了华为与UCSB的硅基外延量子点激光器的对比；➁ 在相同技术条件下，量子点激光器的可靠性高于量子阱激光器；➂ 由于晶格失配和生长技术不成熟，GaAs衬底上的量子点激光器可靠性较低；➃ 强调了华为和UCSB在外延生长技术上的差异；➄ 对晶体界面质量和缺陷密度进行了比较。➀ A comparison between Huawei's and UCSB's silicon-based epitaxial quantum dot lasers is discussed; ➁ The reliability of quantum dot lasers is higher than that of quantum well lasers under the same technical conditions; ➂ The reliability of quantum dot lasers on GaAs substrates is lower due to lattice mismatch and immature growth technology; ➃ The differences in epitaxial growth technology between Huawei and UCSB are highlighted; ➄ The quality of crystal interfaces and defect densities are compared.
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