10/06/2024, 11:01 AM UTC
CIOE2024：IIIV gown on siliconCIOE2024: IIIV gown on silicon
➀ 目前商用的光源集成方案基于bonding技术，优点是高精度对准，缺点是洁净度要求高。➁ 在大硅片上直接生长具有低成本和CMOS工艺兼容性，但外延方面存在挑战。➂ 采用二步生长技术解决适配问题，GaAs-on-V-groove Si (GoVs) 是主流的模板技术。➃ 提出新的无缓冲横向生长方案，缺陷局限在IIIV/Si界面，易于与硅基器件耦合。➄ 光泵浦条件下在1500 nm波段室温成功激射，激光峰值与腔体长度相关。➅ 展示了具有优异暗电流、带宽和响应度的PD。➀ The commercial light source integration solutions are based on bonding technology, with advantages in high-precision alignment but high cleanliness requirements. ➁ On-chip direct growth on large silicon wafers offers potential low cost and CMOS compatibility, but challenges in epitaxy. ➂ A two-step growth technique is used to address fitting issues, with GaAs-on-V-groove Si (GoVs) as the mainstream template technique. ➃ A new bufferless solution with lateral growth is proposed, with advantages in defect limitation and easier coupling with silicon-based devices. ➄ Room-temperature lasing at 1500 nm波段 is achieved under optical pumping conditions, and the laser peak is related to the cavity length. ➅ PDs with excellent performance in terms of dark current, bandwidth, and responsivity are demonstrated.
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