03/26/2025, 10:26 AM UTC
三项首创！九峰山实验室在化合物半导体领域取得重大突破Major Breakthroughs in Compound Semiconductor Field: Jinfengshan Lab Achieves Three Innovations
➀ 九峰山实验室实现全球首次8英寸硅基氮极性氮化镓衬底；
➁ 国内首个100nm硅基氮化镓商用工艺设计套（PDK）平台；
➂ 20米远距无线传输能量技术；
➃ 在氮化镓材料、器件和产业应用方面取得突破；
➄ 实现手机“秒充”和电动汽车“边跑边充”；
➅ 加速6G基站、自动驾驶雷达等高端器件的国产化进程。
➀ Jinfengshan Lab achieves global first 8-inch silicon-based polar GaN substrate;
➁ China's first 100nm high-performance GaN flow PDK platform;
➂ 20-meter long-distance wireless energy transmission technology;
➃ Breakthrough in GaN material, device, and industrial application;
➄ Enabling 'instant charging' for mobile phones and 'while-driving charging' for electric vehicles;
➅ Accelerating the localization of high-end devices such as 6G base stations and autonomous driving radars.
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