10/11/2024, 09:19 AM UTC
SiC迎来劲敌？美国出招SiC's Rival Emerges? The US Makes a Move
➀ 碳化硅（SiC）和氮化镓（GaN）作为第三代半导体，因其宽带隙而受到欢迎；➁ 美国正在大力投资超宽带隙（UWBG）半导体技术；➂ 国防高级研究计划局（DARPA）宣布与雷神公司签订合同，开发使用金刚石和氮化铝的超宽带隙半导体；➃ 合成金刚石材料公司Element Six正在领导DARPA UWBGS计划下的一项项目，以推动半导体技术的发展；➄ 美国政府正在投资UWBG半导体技术的发展，包括北卡罗来纳州立大学的项目。➀ SiC and GaN, as third-generation semiconductors, have gained popularity due to their wide bandgap; ➁ The U.S. is investing heavily in ultra-wide bandgap (UWBG) semiconductor technology; ➂ DARPA has announced a contract with Raytheon to develop ultra-wide bandgap semiconductors using diamond and aluminum nitride; ➃ Element Six, a synthetic diamond material company, is leading a project under DARPA's UWBGS program to advance semiconductor technology; ➄ The U.S. government is investing in the development of UWBG semiconductors, including projects at North Carolina State University.
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本文由大语言模型（LLM）生成，旨在为读者提供半导体新闻内容的知识扩展（Beta）。
